Composition dependence study of thermally evaporated nanocrystalline ZnTe thin films
Creators
- 1. Sri Guru Granth Sahib World University, Department of Nanotechnology (India)
- 2. Sri Guru Granth Sahib World University, Department of Chemistry (India)
- 3. National Institute of Technology, Department of Mechanical Engineering (India)
- 4. Central Scientific Instruments Organization (India)
- 5. Sri Guru Granth Sahib World University, Department of Physics (India)
- 6. Punjabi University, Advanced Materials Research Lab, Department of Basic and Applied Sciences (India)
Description
Composition dependent structural and morphological study of nanocrystalline ZnxTe100−x (0, 5, 20, 30, 40, 50) thin films has been performed. The effect of annealing on these properties is also investigated. Nanocrystalline alloys and thin films of ZnTe were prepared using conventional melt quenching technique and thermal evaporation technique, respectively. The prepared thin films were characterized using Field emission scanning electron microscope (FE-SEM), Atomic force microscope (AFM) and Raman spectroscopy. FE-SEM images show that thin films consist of spherical, compact, densely packed and well-connected grains without any cracks, pitfalls, voids or pinholes. 2-D and 3-D AFM images show grain growth with increasing annealing temperature with improvement in crystallinity and average roughness. Raman Spectra show only Te peaks related to A1 and E2 mode, for x = 0. With addition of Zn, ZnTe peaks arises and the presence of 1LO, 2LO and 3LO ZnTe modes are observed. Only ZnTe peaks are observed at x = 50, with diminishing of Te peaks. Annealing effect on Raman spectra and dark conductivity is also reported.
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Materials Science. Materials in Electronics
- Journal Volume
- 30
- Journal Issue
- 4
- Journal Page Range
- p. 3504-3510
- ISSN
- 0957-4522
- CODEN
- JSMEEV
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52016553
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTALS; ELECTRON MICROSCOPES; GRAIN GROWTH; IRON ALLOYS; NANOSTRUCTURES; PEAKS; RAMAN SPECTRA; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SELENIUM ALLOYS; THIN FILMS; ZINC TELLURIDES
- Descriptors DEC
- ALLOYS; CHALCOGENIDES; ELECTRON MICROSCOPY; FILMS; HEAT TREATMENTS; LASER SPECTROSCOPY; MICROSCOPES; MICROSCOPY; SPECTRA; SPECTROSCOPY; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT ALLOYS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2019 Springer Science+Business Media, LLC, part of Springer Nature