Published 1993
| Version v1
Book
Fullerene field-effect transistors
Creators
- 1. Ludwig-Boltzmann Inst. fuer Festkoerperphysik, Wien (Austria)
- 2. Inst. fuer Festkoerperphysik, Wien Univ. (Austria)
- 3. Semiconductor Lab., Technical Research Centre of Finland, Espoo (Finland)
Description
Undoped C60 and C60/C70 fullerenes have been used as the active material in thin-film field-effect transistors (FET). All FET's turned out to be n-channel devices operating in the accumulation mode with a field-effect mobility around 10-4 cm2/Vs. The conductance-activation energy is a function of the gate voltage. Like in amorphous silicon localized states have a strong influence on the transport properties. These localized states can either originate from disorder or from a self-trapping of the induced carriers in the fullerene. (orig.)
Additional details
Publishing Information
- Publisher
- Springer.
- Imprint Place
- Berlin (Germany)
- ISBN
- 3-540-56195-1
- Imprint Title
- Electronic properties of high-Tc superconductors. The normal and the superconducting state of high-Tc materials. Proceedings
- Imprint Pagination
- 542 p.
- Journal Volume
- 113
- Series
- Springer series in solid-state sciences.
- Journal Page Range
- p. 512-515.
Conference
- Title
- The normal and the superconducting state of high Tc materials.
- Acronym
- International winterschool on electronic properties of high temperature superconductors (IWEPS '92)
- Dates
- 7-14 Mar 1992.
- Place
- Kirchberg, Tirol (Austria).
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 24046827
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; CARBON; EXCITONS; FIELD EFFECT TRANSISTORS; FULLERENES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TRAPPING
- Descriptors DEC
- ELEMENTS; FILMS; NONMETALS; QUASI PARTICLES; SEMICONDUCTOR DEVICES; TEMPERATURE RANGE; TRANSISTORS