Published August 27, 1990
| Version v1
Journal article
Silicon implantation into GaAs: Observations of dose rate dependent electrical activation and damage
- 1. Naval Research Laboratory, Washington, DC (USA)
- 2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN (USA)
Description
The electrical activation of ion-implanted silicon in GaAs has been studied as a function of dose rate (i.e., ion-current density). For a fluence of 1014 cm-2, the Hall sheet carrier activation is shown to depend strongly on the dose rate at which the implant was carried out. Carrier concentrations of 7x1018 cm-3 were produced at a 50x10-9 A/cm2 ion-current density. The variation in electrical activation is believed to be the result of a dose rate dependence of the ion-induced damage of GaAs which can be clearly seen in Rutherford backscattering (RBS) channeling measurements of 1015 cm-2 implants
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 57
- Journal Issue
- 9
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 911-913
- ISSN
- 0003-6951
- CODEN
- APPLA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22011678
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ACTIVATION ENERGY; ANNEALING; GALLIUM ARSENIDES; ION IMPLANTATION; ORNL; PHYSICAL RADIATION EFFECTS; SILICON
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELEMENTS; ENERGY; GALLIUM COMPOUNDS; HEAT TREATMENTS; NATIONAL ORGANIZATIONS; PNICTIDES; RADIATION EFFECTS; SEMIMETALS; US AEC; US DOE; US ERDA; US ORGANIZATIONS