Published August 1989 | Version v1
Journal article

Characteristics of electrophysical and photoelectric properties of CdxHg1-xTe single crystals subjected to laser irradiation

  • 1. V. G. Korolenko State Pedagogical Institute, Poltava (USSR)

Description

A study was made of the Hall effect, photoconductivity, and photomagnetic effect in n-type CdxHg1-xTe crystals subjected to different laser radiation doses and also in samples with a mechanically disturbed surface layer. A field dependence of the Hall coefficient RH(H), a shift of the photoconductivity and photomagnetic effect maxima toward shorter wavelengths, and enhancement of the photomagnetic effect near the surface were all due to the formation of a p-type surface layer with a wider band gap

Additional details

Publishing Information

Journal Title
Soviet Physics - Semiconductors (English Translation)
Journal Volume
23
Journal Issue
8
Series
Sov. Phys. - Semicond. (Engl. Transl.).
Journal Page Range
862-864
ISSN
0038-5700
CODEN
SPSEA

Optional Information

Notes
Cover-to-cover translation of Fizika i Tekhnika Poluprovodnikov (USSR).