Growth and properties of pentanary solid solutions GaInAsPSb for 3-5 wavelength range optoelectronic devices

In this work, the opportunity for utilization of novel semiconductor materials GaInAsPSB for active layers of room-temperature optoelectronic devices for 3-5 μm wavelength range was investigated. GaInAsPSB epitaxial layers lattice matched to GaSb and InAs were grown by LPE from antimony-rich melt solutions. It was shown that suggested pentanary solid solutions demonstrate high crystal quality and sufficient efficiency of optical radiation. High luminescent properties of GaInAsPSB solid solutions can be explained as the result of favorable band structure. Analysis has shown that additions of phosphorous changes the spin- spitting is greater than band gap value