Solid-phase recrystallization of amorphous silicon in Si(100) crystalline substrate in the presence of point defect flux

The influence of the point defect flux on annealing of ion-implanted amorphous silicon on a Si(100) crystal substrate has been studied. In the first case the point defect flux was created by emission of defects from an Ar+-implanted damaged layer on the back side of the silicon wafer and in the other case it was done by means of defect migration at the interface of annealing-grown chromium silicide on the back side of the wafer. It is shown that the interstitial flux has no appreciable effect on epitaxial crystallization and layer-by-layer amorphization but it affects lattice rearrangements in the amorphous layer responsible for the changes of the electrical properties of the layer