Evaluation of the crystallization kinetic parameters in terms of the sheet resistance of amorphous As${}_{30}$Te${}_{60}$Ga${}_{10}$ films

The sheet resistance (R${}_s$), and hence electrical resistivity of different thicknesses (200-320 nm) of As${}_{30}$Te${}_{60}$Ga${}_{10}$ films was measured from 490 to 600 K. Crystallization kinetics parameters of the As${}_{30}$Te${}_{60}$Ga${}_{10}$ films were determined in terms of the evaluated R${}_s$ for various film thicknesses. The investigated kinetics parameters were compared to obtained experimental data from differential scanning calorimetry as well as were confirmed by the X-ray diffraction and scanning electron microscope. It was found that the exothermic heat flow can be obtained from the measured surface resistance, with high accuracy, for all As${}_{30}$Te${}_{60}$Ga${}_{10}$ films. The crystallization kinetic parameters of As${}_{30}$Te${}_{60}$Ga${}_{10}$ films were determined under non-isothermal and isoconversional conditions. Besides, the activation energy required for the amorphous-crystalline transition of As${}_{30}$Te${}_{60}$Ga${}_{10}$ was estimated and various models of the crystallization kinetics were applied. It was observed that the Šesták-Berggren equation is more appropriate, compared to the Johnson-Mehl-Avrami equation, for describing the kinetics of crystallization in As${}_{30}$Te${}_{60}$Ga${}_{10}$. The obtained results could give an experimental basis for the optimization of phase-change memory in the As-Te-Ga system in terms of the sheet resistance measurement and the possibility of its application for various phase-change materials.