Calculation of electron spin g-factor in semiconductor quantum wells by k-p perturbation method

Lande g-factor which characterizes the response of electrons to external magnetic field is one of the most important factors in semiconductor opto-magnetic effects. In this report effects of quantum confinements on the electron g-factor in semiconductor quantum wells are discussed. First we introduce Ivchenko's method of calculating g-factor based on k·p high-order perturbation method. Then we examine a simplified k·p method to obtain g-factor in quantum wells. It is found that the simplified method exhibits a good agreement with the experimental trends not only in the unstrained QWs but also in strained QWs. (author)