Published 1974
| Version v1
Journal article
Interstitial properties deduced from internal friction measurements on boron-implanted silicon
Creators
- 1. Max-Planck-Institut fuer Metallforschung, Stuttgart (F.R. Germany). Inst. fuer Physik
Description
no abstract available
Additional details
Identifiers
Publishing Information
- Journal Title
- Radiation Effects
- Journal Volume
- 21
- Journal Issue
- 2
- Series
- Radiat. Eff.
- Journal Page Range
- 119-133
- ISSN
- 0033-7579
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 5149345
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ACTIVATION ENERGY; ATOMS; BORON; BORON IONS; CRYSTAL LATTICES; DIFFUSION; ELECTRIC CHARGES; INTERNAL FRICTION; INTERSTITIALS; ION IMPLANTATION; ORIENTATION; SEMICONDUCTOR MATERIALS; SILICON
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY; FRICTION; IONS; POINT DEFECTS; SEMIMETALS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent