Published November 1, 2005
| Version v1
Journal article
Electrical characteristics of heavily doped NTD Ge at very low temperatures
- 1. Department of Physics, University of Florence, Florence (Italy)
- 2. INFN, Section of Florence, Florence (Italy)
- 3. Lawrence Berkeley National Laboratory, University of California, Berkeley (United States)
- 4. Department of Mechanics, University of Florence, Florence (Italy)
- 5. INFN, Section of Florence, Florence (Italy) and Department of Physics, University of Florence, Florence (Italy)
Description
We report about the measurement of the electric characteristics of some NTD Ge thermistors at temperatures down to 25mK. The dopant concentration is around 6x1016cm-3, producing a material of characteristics close to the metal-to-insulator transition. Fitting the ρ(T) characteristics with a variable exponent p Mott's law, a p around 0.6 was obtained. This result confirms the hypothesis of a dependence of p on the doping level
Additional details
Identifiers
- DOI
- 10.1016/j.physb.2005.07.008;
- PII
- S0921-4526(05)00882-3;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 368
- Journal Issue
- 1-4
- Journal Page Range
- p. 139-142
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37068344
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CRYOGENICS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; GERMANIUM; PHASE TRANSFORMATIONS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; THERMISTORS
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELEMENTS; MATERIALS; METALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.