Effect of the solutes Si, Ge, Sb on cavity germination and vacancy migration in nickel irradiated by electrons
Description
Effect of Si solute (negative size effect) and of Ge and Sb solutes (positive size effect) on the germination of cavities in electron irradiated nickel between 2000C and 4000C is studied. With a simple germination model, taking into account dislocation density variable with temperature and Frenkel defects production rate, it is shown that cavity germination rate varies strongly when the solute is changing either vacancy formation enthalpy or vacancy migration enthalpy or interstitial migration enthalpy. Positron lifetime measurements show that the solutes Ge and Sb increase considerably vacancy migration enthalpy but is not modified by the solute Si. Cavity germination rate is measured by electron microscopy in nickel and nickel alloys: Ni 0.8% at Si, Ni 0.8% at Ge, Ni 0.1% at Sb and Ni 0.8% at Sb irradiated with electrons. At 3000C germination rate is reduced ten-fold by Si, increased 4-fold by Sb and is practically unchanged with Ge
Availability note (English)
MF available from INIS under the Report Number.Abstract (French)
On etudie l'effet du solute Si (effet de taille negatif) et des solutes Ge et Sb (effet de taille positif) sur la germination des cavites dans le nickel irradie aux electrons entre 2000C et 4000C. On montre d'abord dans le cadre d'un modele tres simple de germination prenant en compte une densite de dislocations variable avec la temperature et le taux de production de paires de Frenkel que le taux de germination des cavites varie fortement quand un solute change l'une des trois grandeurs: enthalpie de formation des lacunes, enthalpie de migration des lacunes et enthalpie de migration des interstitiels. On montre par des mesures de temps de vie du positon que les solutes Ge et Sb augmentent considerablement l'enthapie de migration des lacunes alors que le solute Si ne la modifie pas. On mesure par microscopie electronique le taux de germination des cavites dans du nickel et des alliages Ni 0,8% a Si, Ni 0,8% a Ge, Ni 0,1% a Sb et Ni 0,8% a Sb irradies aux electrons. A 3000C, le silicium reduit considerablement le taux de germination d'un facteur 10. L'antimoine augmente d'un facteur superieur a 4 le taux de germination alors que le germanium ne le modifie pratiquement pasFiles
20048259.pdf
Files
(2.1 MB)
| Name | Size | Download all |
|---|---|---|
|
md5:2cf631171c9a4d5cfba93f32c4e35c87
|
2.1 MB | Preview Download |
Additional details
Additional titles
- Original title (French)
- Effet des solutes Si, Ge, Sb sur la germination des cavites et la migration des lacunes dans du nickel irradie aux electrons
Publishing Information
- Imprint Pagination
- 135 p.
- Report number
- FRCEA-TH--183
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 20048259
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Thesis
- Descriptors DEI
- ANNIHILATION; ANTIMONY ADDITIONS; CAVITIES; DISLOCATIONS; ELECTRON MICROSCOPY; ELECTRONS; ENTHALPY; FRENKEL DEFECTS; GERMANIUM ADDITIONS; HIGH TEMPERATURE; INTERSTITIALS; MICROSTRUCTURE; MIGRATION LENGTH; NICKEL; NICKEL BASE ALLOYS; PHYSICAL RADIATION EFFECTS; POSITRONS; SILICON ADDITIONS; SWELLING; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ALLOYS; ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DEFORMATION; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; INTERACTIONS; LEPTONS; LINE DEFECTS; MATTER; METALS; MICROSCOPY; NICKEL ALLOYS; PARTICLE INTERACTIONS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATION EFFECTS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENTS; VACANCIES