Thermal expansion anisotropy and site occupation of the pseudo-binary molybdenum vanadium silicide Mo5Si3-V5Si3
Creators
- 1. Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, P.O. Box 2008, TN 37831 6064 (United States)
Description
The coefficients of thermal expansion (CTEs) and atomic site occupation factors were measured for the pseudo-binary molybdenum-vanadium silicide Mo5Si3-V5Si3. The ratios of the CTEs in the crystallographic c and a directions range from 2.0 for Mo5Si3 to 1.2 for Mo2V3Si3. The metal atoms can occupy chain sites (in the crystallographic c-direction), and non-chain sites. The relatively small V atoms prefer the chain sites in Mo5Si3, whereas the relatively large Mo atoms prefer the non-chain sites in V5Si3. These site-occupation characteristics reduce the thermal expansion in the c-direction and thereby the CTE anisotropy. Ab initio calculations for Mo4VSi3 suggest that, energetically, V prefers the chain sites, while the measurements show that V occupies also non-chain sites. Extrapolation of the experimental results assuming the site-occupation used in the calculations agrees with the theoretical result that the thermal expansion of Mo4VSi3 is isotropic
Additional details
Identifiers
- DOI
- 10.1016/j.actamat.2005.02.005;
- PII
- S1359-6454(05)00081-9;
Publishing Information
- Journal Title
- Acta Materialia
- Journal Volume
- 53
- Journal Issue
- 8
- Journal Page Range
- p. 2431-2437
- ISSN
- 1359-6454
- CODEN
- ACMAFD
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37055968
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANISOTROPY; CRYSTALLOGRAPHY; EXTRAPOLATION; MOLYBDENUM; MOLYBDENUM SILICIDES; THERMAL EXPANSION; VANADIUM; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; ELEMENTS; EXPANSION; MATHEMATICAL SOLUTIONS; METALS; MOLYBDENUM COMPOUNDS; NUMERICAL SOLUTION; REFRACTORY METAL COMPOUNDS; REFRACTORY METALS; SCATTERING; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.