Published January 2007
| Version v1
Journal article
Evidence for a dose dependence for thermal redistribution of implanted silicon in SiO2
- 1. InESS - Universite Louis Pasteur and CNRS, BP 20, 23 rue du Loess, F-67037 Strasbourg cedex (France)
- 2. MDM - INFM Via C. Olivetti 2, I-20041 Agrate Brianza (Italy)
- 3. CEMES (CNRS), BP 4347, 29 rue J. Marvig, F-31055 Toulouse cedex (France)
Description
The redistribution of implanted 30Si atoms in isotopically purified 28SiO2 thermal oxide is studied as functions of temperature and implanted dose. The results clearly evidence a diffusion enhancement, which is more pronounced at low temperature and high dose. The results are consistent with the simple picture that the redistribution is governed by a Si interstitial diffusion mechanism, which can be slowed down by the presence of residual impurities
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2006.10.077;
- PII
- S0168-583X(06)01041-X;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 254
- Journal Issue
- 1
- Journal Page Range
- p. 139-142
- ISSN
- 0168-583X
- CODEN
- NIMBEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38040906
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMS; DIFFUSION; DOSES; IMPURITIES; ION IMPLANTATION; NANOSTRUCTURES; POTASSIUM FLUORIDES; SILICON; SILICON 30; SILICON OXIDES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K
- Descriptors DEC
- ALKALI METAL COMPOUNDS; CHALCOGENIDES; ELEMENTS; EVEN-EVEN NUCLEI; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; ISOTOPES; LIGHT NUCLEI; NUCLEI; OXIDES; OXYGEN COMPOUNDS; POTASSIUM COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; SILICON ISOTOPES; STABLE ISOTOPES; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.