Nonalloyed transparent ohmic contact of indium tin oxide to p-type Si0.8Ge0.2
- 1. Department of Electrical Engineering, Da-Yeh University, Da-Tsuen, Changhua, Taiwan (China)
- 2. Department of Materials Science and Engineering, Ming Hsin Uinversity of Science and Technology, Taiwan (China)
Description
Nonalloyed transparent ohmic contacts of indium tin oxide (ITO) to p-type Si0.8Ge0.2 layer with and without a Si-capping layer were examined. The ITO films and the p-type Si0.8Ge0.2 layers were deposited by using sputtering and ultrahigh-vacuum chemical vapor deposition, respectively. It is shown that the ITO/p-type Si0.8Ge0.2 contact structure exhibits a specific contact resistance of 2.26 x 10-5 Ω cm2 as compared to that of 2.78 x 10-2 Ω cm2 for the ITO/Si/p-type Si0.8Ge0.2 contact structure. Possible mechanisms are proposed. The ITO film exhibits a transmittance more than 85% within a wavelength range from 800 to 1400 nm. Therefore, the ITO film has a high potential for fabricating near infrared optoelectronic devices using Si1-xGe x material
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2005.08.006;
- PII
- S0040-6090(05)01199-5;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 493
- Journal Issue
- 1-2
- Journal Page Range
- p. 203-206
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37023183
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; GERMANIUM; GERMANIUM COMPOUNDS; LAYERS; SILICON; SILICON COMPOUNDS; SPUTTERING; THIN FILMS; TIN OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; ELEMENTS; FILMS; METALS; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SURFACE COATING; TIN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.