Carrier lifetimes in ion-damaged GaAs

Photoluminescence excitation correlation spectroscopy has been used to measure the dependence of carrier lifetime on the H+ ion implantation dose in GaAs. For doses greater than 1 x 1012 cm/sup -2/ the carrier lifetime is inversely proportional to the ion dose. The minimum lifetime measured was 0.6+-0.2 ps for a dose of 1 x 1014 cm/sup -2/. Most important, there is no sign of saturation of carrier lifetime with ion dose down to this lifetime, thus still shorter lifetimes should be achievable with increased ion dose