Published October 1, 2009 | Version v1
Journal article

Atom probe microscopy of three-dimensional distribution of silicon isotopes in 28Si/30Si isotope superlattices with sub-nanometer spatial resolution

  • 1. School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522 (Japan)
  • 2. Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522 (Japan)
  • 3. Toshiba Nanoanalysis Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583 (Japan)

Description

Laser-assisted atom probe microscopy of 2 nm period 28Si/30Si isotope superlattices (SLs) is reported. Three-dimensional distributions of 28Si and 30Si stable isotopes are obtained with sub-nanometer spatial resolution. The depth resolution of the present atom probe analysis is much higher than that of secondary ion mass spectrometry (SIMS) even when SIMS is performed with a great care to reduce the artifact due to atomic mixing. Outlook of Si isotope SLs as ideal depth scales for SIMS and three-dimensional position standards for atom probe microscopy is discussed.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
106
Journal Issue
7
Journal Page Range
p. 076102-076102.3
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
(c) 2009 American Institute of Physics