Published September 1991 | Version v1
Journal article Metadata-only

Effect of 10.6 μm radiation on edge luminescence of epitaxial n-GaAs

Creators

  • 1. AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.

Description

Edge luminescence of epitaxially nondoped n-GaAs excited by 10.6 μm light after the effect of interzonal excitation pulse (λ=0.53 μm) is investigated. Ignition of edge luminescence is caused by the release of carriers from impurity levels under the effect of 10.6 μm light. Luminescence kinetics measurements allowed to estimate cross sections of small acceptor photoionization in GaAs. A significant difference of the observed effects from the case of λ<4 μm light influence is shown

Additional details

Additional titles

Original title (Russian)
Воздействие излучения 10.6 мкм на краевую люминесценцию эпитаксиального н-GaAs

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
25
Journal Issue
9
Journal Page Range
p. 1593-1600.
ISSN
0015-3222
CODEN
FTPPA4

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
24004553
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
EPITAXY; GALLIUM ARSENIDES; INFRARED RADIATION; N-TYPE CONDUCTORS; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; TIME DEPENDENCE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELECTROMAGNETIC RADIATION; EMISSION; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; PHOTON EMISSION; PNICTIDES; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS