Theoretical analysis and computer calculation of the equivalent dose of p, γ, β irradiation damages on CMOS electronic device

The physical model of p(proton), γ, β irradiation damages (including the concentrations of electron-hole pair and displaced atom) on CMOS electronic device has been established. The concentrations of electron-hole pair and displaced atom produced by p, γ and β irradiations in the various layers of CMOS electronic device have been calculated by EGS4 and TRIM programs, respectively. The calculation results show that in the bridge-insulator layer of the CMOS device, the concentrations of electron-hole pair and displaced atom produced by β irradiation are higher than that produced by γ irradiation, and the lowest by p irradiation. This indicates that the β irradiation damage on CMOS device is the most serious for the three kinds of particles, the γ irradiation damage is the second, and the proton irradiation damage is the smallest