Published 1980 | Version v1
Book Metadata-only

Observation of surface dissociation of HgTe crystal by means of 42MeV-O5+ backscattering

Creators

  • 1. Tsukuba Univ., Sakura, Ibaraki (Japan)

Description

no abstract available

Additional details

Publishing Information

Publisher
Inst. of Electr. Eng. of Japan.
Imprint Place
Tokyo, Japan
Imprint Title
Proceedings of the fourth symposium on ion sources and ion application technology
Imprint Pagination
388 p.
Journal Page Range
p. 289-292.

Conference

Title
4. symposium on ion sources and ion application technology.
Dates
24 - 26 Jun 1980.
Place
Tokyo, Japan.

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
13657880
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
ANNEALING; ATOMS; BACKSCATTERING; CRYSTALS; DISSOCIATION; ENERGY RESOLUTION; INTERFACES; ION SCATTERING ANALYSIS; MERCURY TELLURIDES; MEV RANGE 10-100; OXYGEN 16 BEAMS; QUANTITY RATIO; STABILITY; SURFACES; TEMPERATURE DEPENDENCE
Descriptors DEC
BEAMS; CHALCOGENIDES; CHEMICAL ANALYSIS; ENERGY RANGE; HEAT TREATMENTS; ION BEAMS; MERCURY COMPOUNDS; MEV RANGE; NONDESTRUCTIVE ANALYSIS; RESOLUTION; SCATTERING; TELLURIDES; TELLURIUM COMPOUNDS

Optional Information

Notes
Published in summary form only.