Sensitization by UV light of α-Al2O3:C polycrystalline detectors

This paper describes an increase in sensitivity to gamma and beta radiation on α-Al2O3:C polycrystalline detector, which has been produced by a sol-gel process, following previous exposure to ultraviolet light. The increased sensitivity of the detector as a function of the exposure time and ultraviolet wavelength was studied. Since the main luminescent centers have emission peaks at different wavelengths, selective measurements of thermoluminescent emission intensity were done, in order to investigate the possible conversion of centers as a result of the exposition to ultraviolet light. Experimental results indicate that the nature and parameters of the luminescent centers in α-Al2O3:C sol-gel material can be very different of those in α-Al2O3:C single crystal. (author)