Published August 1, 2012 | Version v1
Journal article

Motion of positively charged muonium in ZnO

  • 1. Texas Tech University, Lubbock, TX 79407 (United States)
  • 2. Istanbul University, Beyazit 34459, Istanbul (Turkey)

Description

We report on a study of the motional characteristics of positively charged muonium defect centers in ZnO as an analog for H+ behavior. Muon spin depolarization measurements at zero applied magnetic field were completed from 20 K to 400 K, with preliminary results to 750 K. Results at the lower temperatures imply that Mu+ occupied two sites, and indicate local motion as thermally assisted tunneling with a characteristic energy of ∼60 meV, as well as a site change transition above 200 K with barrier energy ∼440 meV. Based on theoretical results, we have tentatively assigned these features to tunneling among three equivalent oxygen anti-bonding sites (AB⊥) and a transition to a lower-energy bond-centered site (BC‖) oriented along the c-axis. Preliminary fits suggest that global diffusion of muonium occurs above 400 K, with a diffusion barrier energy of ∼0.7 eV.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2011.08.026

Additional details

Identifiers

DOI
10.1016/j.physb.2011.08.026;
PII
S0921-4526(11)00779-4;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
407
Journal Issue
15
Journal Page Range
p. 2864-2866
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
26. international conference on defects in semiconductors
Dates
18-22 Jul 2011
Place
Nelson (New Zealand)

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.