Published October 27, 2008
| Version v1
Journal article
Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN
Creators
- 1. Applied Research Center, Old Dominion University, Newport News, Virginia 23606 (United States)
- 2. Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250 (United States)
- 3. Semiconductor Research Center, Wright State University, Dayton, Ohio 45435 (United States)
Description
The free hole carriers in GaN have been limited to concentrations in the low 1018 cm-3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ∼10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ∼1.5x1019 cm-3
Additional details
Identifiers
- DOI
- 10.1063/1.3005640;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 93
- Journal Issue
- 17
- Journal Page Range
- p. 172112-172112.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40051071
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ACTIVATION ENERGY; CRYSTAL GROWTH; DOPED MATERIALS; GALLIUM NITRIDES; HOLES; LAYERS; MAGNESIUM; MOLECULAR BEAM EPITAXY; PERIODICITY; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ALKALINE EARTH METALS; CRYSTAL GROWTH METHODS; ELEMENTS; ENERGY; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; METALS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; VARIATIONS
Optional Information
- Notes
- (c) 2008 American Institute of Physics