Electrical and optical properties of Hg3In2Te6 single crystals

The basic properties of n-Hg3In2Te6 single crystals with resistivity of 1-2 Ω.cm are studied in their application for 1.55 μm wavelength photodiodes as optimal detectors for quartz fiber communications. The band gap of Hg3In2Te6in the temperature range of 248-353 K has been determined on the base of the optical transmission spectra. The absorption curves in the range of 0.4-1.7 μm (at 300 K) have been obtained from the reflection spectra of polarized light. It is also shown that the electrical conductivity of the semiconductor is controlled by two types of donors with ionization energies of 0.063 and 0.18 eV, respectively, while the charge carrier mobility is predominantly affected by scattering at charged centers. The temperature dependence of the electron concentration in the temperature range from 100 to 370 K is quantitatively described on the base of the electroneutrality equation. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)