Published October 2004
| Version v1
Journal article
Annealing of radiation defects in irradiated gamma-quanta and fast electrons unalloyed n-GaAs crystals
- 1. Inst. fiziki tsverdaga tsela i polupravadnikow, Natsyyanal'naya akadehmiya navuk Belarusi, Minsk (Belarus)
Description
The annealing behavior of unalloyed n-type GaAs crystals irradiated with gamma-rays and 4-MeV electrons has been investigated. It have been determined the radiation defects annealing activation energy of 0.65±0.1 eV - for irradiated with gamma-rays crystals and of 0.65±0.1 eV - at the first annealing stage and 1.5±0.1 eV at the second annealing stage for irradiated with fast electrons crystals. (authors)
Additional details
Additional titles
- Original title (Russian)
- Отжиг радиационных дефектов в облученных гамма-квантами и быстрыми электронами нелегированных монокристаллах арсенида галлия н-типа
Publishing Information
- Journal Title
- Vestsi Natsyyanal'naj Akadehmii Navuk Belarusi. Seryya Fizika-Matehmatychnykh Navuk
- Journal Volume
- 4
- Journal Page Range
- p. 74-78
- ISSN
- 1561-2430
INIS
- Country of Publication
- Belarus
- Country of Input or Organization
- Belarus
- INIS RN
- 36109294
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ACTIVATION ENERGY; ANNEALING; CRYSTAL DEFECTS; ELECTRON BEAMS; GALLIUM ARSENIDES; GAMMA RADIATION; MEV RANGE 01-10; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ENERGY; ENERGY RANGE; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONIZING RADIATIONS; LEPTON BEAMS; MATERIALS; MEV RANGE; PARTICLE BEAMS; PNICTIDES; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- 6 refs., 3 figs.