Published December 1, 2019 | Version v1
Journal article Metadata-only

Arsenic background pressure effect on In droplet morphology

Creators

  • 1. Research and Education Center "Nanotechnologies", Southern Federal University, Taganrog 347922 (Russian Federation)
  • 2. Department of Nanotechnologies and Microsystems, Southern Federal University, Taganrog 347922 (Russian Federation)

Description

The paper presents the results of an experimental study of the effect of arsenic background pressure on the characteristics of droplet nanostructures formed by droplet epitaxy. We have shown that with an increase in the initial size of the droplets, the sensitivity of the system to the background pressure decreases. It is shown that the residual pressure of arsenic can be used as an additional control parameter of the droplet epitaxy technique. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/1410/1/012051

Additional details

Identifiers

DOI
10.1088/1742-6596/1410/1/012051;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
1410
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1742-6596

Conference

Title
6. International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures
Acronym
Saint Petersburg OPEN 2019
Dates
22-25 Apr 2019
Place
Saint Petersburg (Russian Federation)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53068141
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ARSENIC; DROPLETS; EPITAXY; MORPHOLOGY; NANOSTRUCTURES; PRESSURE DEPENDENCE; SENSITIVITY
Descriptors DEC
CRYSTAL GROWTH METHODS; ELEMENTS; PARTICLES; SEMIMETALS