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AbstractAbstract
[en] Variation trends across the AnO2 series of An5f-electron covalent bonding and An5f→O3s, O2p→An5f charge transfer energies, are studied using DV-Xα relativistic spin-polarised computation of electronic structures applied to 11 'AnO8' clusters, from ThO8 to FmO8. It is found that the binding energies of 5f orbitals, therefore the An5f-O2p hybridisation, are increasing though the 5f orbitals are localising across the An series. In our calculations, the 3s and 3p ionic-like orbitals of O2- ions are included for the first time as LCAO-MO bases. Then, the conduction band is a mixing of O3s and An6d and its lower edge corresponds to an O3s-dominated state. Moreover, the calculated charge transfer (CT) energies of An5f→O3s and O2p→An5f transitions show the so-called tetrad effect when CT energies, respectively increasing and decreasing across the AnO2 series. It is pointed out that the tetrad effect here comes mainly from the special spin-polarised pattern of 5f levels and the increasing general trend of 5f binding energies. (orig.)
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10 refs.
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Journal Article
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Zhang, Z.; Len, Patrick; Kaduwela, A.; Thevuthasan, Suntharampillai; Van Hove, Michel A.; Fadley, Charles S.
Ernest Orlando Lawrence Berkeley National Lab., Advanced Light Source, Berkeley, CA (United States). Funding organisation: US Department of Energy (United States)1995
Ernest Orlando Lawrence Berkeley National Lab., Advanced Light Source, Berkeley, CA (United States). Funding organisation: US Department of Energy (United States)1995
AbstractAbstract
No abstract available
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Source
1 Oct 1995; [vp.]; 42. National Symposium of the American Vacuum Society; Minneapolis, MN (United States); 16-20 Oct 1995; AC03-76SF00098; Available from (additional information): www.als.lbl.gov/
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Report
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Zhang, Z.; Len, Patrick; Kaduwela, A.; Thevuthasan, Suntharampillai; Van Hove, Michel A.; Fadley, Charles S.
Ernest Orlando Lawrence Berkeley National Lab., Advanced Light Source, Berkeley, CA (United States). Funding organisation: US Department of Energy (United States)1995
Ernest Orlando Lawrence Berkeley National Lab., Advanced Light Source, Berkeley, CA (United States). Funding organisation: US Department of Energy (United States)1995
AbstractAbstract
No abstract available
Primary Subject
Source
1 Oct 1995; [vp.]; AC03-76SF00098; Available from For possible additional information, see www.als.lbl.gov/
Record Type
Miscellaneous
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Len, Patrick; Thevuthasan, Suntharampillai; Fadley, Charles S.; Van Hove, Michel A.; Denlinger, Jonathan D.; Tonner, Brian P.; Rotenberg, Eli; Kevan, Stephen D.; Gog, T.; Materlik, G.
Ernest Orlando Lawrence Berkeley National Lab., Advanced Light Source, Berkeley, CA (United States). Funding organisation: US Department of Energy (United States)1994
Ernest Orlando Lawrence Berkeley National Lab., Advanced Light Source, Berkeley, CA (United States). Funding organisation: US Department of Energy (United States)1994
AbstractAbstract
No abstract available
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Secondary Subject
Source
LBNL/ALS--535; AC03-76SF00098; Journal Publication Date: May 6 1994
Record Type
Journal Article
Journal
Journal of Electron Spectroscopy and Related Phenomena; ISSN 0368-2048;
; CODEN JESRAW; v. 68; [10 p.]

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AbstractAbstract
[en] Applications of the methods of electron-, X-ray, electron-photoelectron and Auger-spectroscopy for investigations into the thin surface layers of amoAphous metallic alloys, metal coatings and transition layers between the coating and the base metal for determination of reasons for microelectronics failures are considered
Original Title
Issledovanie poverkhnostnykh sloev metodom ehlektronnoj spektroskopii
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Record Type
Journal Article
Journal
Uspekhi Fizicheskikh Nauk; ISSN 0042-1294;
; v. 245(3); p. 537-542

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White, C.L.
Oak Ridge National Lab., TN (USA)1984
Oak Ridge National Lab., TN (USA)1984
AbstractAbstract
[en] Interfacial segregation, often confined to within a few atomic distances of the interface, can strongly influence the processing and properties of metals and ceramics. The thinness of such solute-enriched regions can cause them to be particularly suitable for study using surface sensitive microanalytical techniques such as Auger electron spectroscopy (AES). The application of AES to studies of interfacial segregation in metals and ceramics is briefly reviewed, and several examples are presented. 43 references, 14 figures
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1984; 47 p; 37. Pacific Coast regional meeting of the American Ceramic Society; San Francisco, CA (USA); 28-31 Oct 1984; Available from NTIS, PC A03/MF A01 as DE85005709
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Report
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Conference
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AbstractAbstract
[en] Al(111) has been studied with angle-resolved photoelectron spectroscopy. A previously not observed surface state band located around the K point in the surface Brillouin zone is reported. The measured dispersion of the surface state band falls in an absolute electron energy band gap when the three-dimensional band structure from a new LAPW (Linearized-Augmented-Plane-Wave) calculation is projected onto the surface Brillouin zone of the (111) crystal face. The existence of this surface state has been theoretically predicted by several authors. Direct transitions between bulk bands are found to give significant contributions to the photocurrent. Experimentally deduced initial-state energy dispersion of the bulk transitions are compared to the corresponding dispersion obtained from the LAPW band structure calculation. (orig.)
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Source
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Journal Article
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Physica Scripta; ISSN 0031-8949;
; v. 32(1); p. 39-42

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AbstractAbstract
[en] The electronic properties of the Ge(113):As adsorption system and their characteristic surface structure 1x1 and 2x1 were investigated using electron spectroscopy methods. The preliminary model which explain the electronic properties of the Ge(113):As system is proposed
Original Title
Adsorbtsyiya As na poverkhnyi Ge(113)
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Source
Record Type
Journal Article
Journal
Vyisnik Kiyivs'kogo Unyiversitetu. Fyiziko-Matematichnyi Nauki; ISSN 1812-5409;
; (no.3); p. 233-237

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Sun, K.; Wang, L.M.; Ewing, R.C.; Weber, W.J., E-mail: lmwang@umich.edu2004
AbstractAbstract
[en] Electron irradiation induced phase separation in a sodium borosilicate glass was studied in situ by analytical electron microscopy. Distinctly separate phases that are rich in boron and silicon formed at electron doses higher than 4.0 x 1011 Gy during irradiation. The separated phases are still in amorphous states even at a much high dose (2.1 x 1012 Gy). It indicates that most silicon atoms remain tetrahedrally coordinated in the glass during the entire irradiation period, except some possible reduction to amorphous silicon. The particulate B-rich phase that formed at high dose was identified as amorphous boron that may contain some oxygen. Both ballistic and ionization processes may contribute to the phase separation
Primary Subject
Source
12. international conference on radiation effects in insulators; Gramado (Brazil); 31 Aug - 5 Sep 2003; S0168583X03022456; Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: Pakistan
Record Type
Journal Article
Literature Type
Conference
Journal
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms; ISSN 0168-583X;
; CODEN NIMBEU; v. 218(4); p. 368-374

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AbstractAbstract
[en] Photoelectron holography requires a large data set covering a wide energy range. Changes in experimental conditions and sample surface regeneration during the course of measurement are often unavoidable or necessary, which can result in variations in measured intensity that must be normalized out before data processing. This normalization procedure can introduce a significant error, resulting in image degradation. To eliminate this problem, two methods of intensity self-normalization are introduced, one based on branching ratio measurements and the other based on logarithmic derivative measurements. The As-on-Si(111) system is chosen as a test case for these methods. Both the As and Si core levels are used to reconstruct the three-dimensional atomic structure for the top three atomic layers. The results from these two methods are mutually consistent and in good agreement with other available experimental and theoretical results. This paper also contains an analysis in regard to the use of an inner potential to account for surface refraction. Images are generated without refraction for an estimate of its effect on image quality. Similar analyses are carried out for the proper use of energy and angular window functions in the holographic transform, and for the effect of scattering phase shift that has been a major problem for direct data inversion. (c) 1999 The American Physical Society
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Journal Article
Journal
Physical Review. B, Condensed Matter and Materials Physics; ISSN 1098-0121;
; v. 60(24); p. 16722-16729

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