[en] The X ray photoelectron intensity issued from a thin film sample attached below an anode (in a sheet form) is calculated and the principles and expected performances of photoelectron microanalysis are deduced. In scanning electron microscopy, using the proposed operating conditions, it will be possible to obtain a final electronic image not only characteristic of a given element but also of its oxydation degree with a spatial resolution of about 1μ. A.E.S. and X.P.S. are compared and the schematic drawing of a versatile apparatus allowing electron induced A.E.S., X ray induced A.E.S. and X.P.S. is pointed out

No abstract available

[en] A discussion is given of the types of molecular structure information available from X-ray photoelectron spectroscopy. A complete set of atomic charges in a molecule can be deduced from core-level binding energy shifts. Atomic-orbital composition of molecular orbitals is derived from relative intensities. Correlation peaks yield information about electron correlation. Relaxation energies are related to basicity for certian functional groups. (author)

[en] A survey is given of the development of x-ray and ultraviolet photoelectron spectroscopy. Applications of photoelectron spectroscopy to studies of atomic electronic configurations are discussed, including photoelectron spectra of hydrides isoelectronic with the inert gases; photoelectron spectra of the halogen derivatives of methane; photoelectron spectra of multiple bonded diatomic molecules; spectra and structure of some multiple bonded polyatomic molecules; spectra and structure of triatomic molecules; and methods of orbital assignment of bands in photoelectron spectra. Physical aspects are considered, including intensities; selection rules; dependence of cross section on photoelectron energy; autoionization; angular distribution of photoelectrons; electron-molecule interactions; and transient species. (26 figures, 54 references) (U.S.)

No abstract available

[en] Combining a Auger spectrometer with an ESCA spectrometer offers special advantages for materials characterization. Auger spectrum allows a very high sensitivity to be obtained due to a rather strong electronic excitation that allows also the presence of small particulates of foreign substance monolayers at the surface to be displayed. So the Auger procedure is suitable for surface cleanliness verification. The photoelectron (ESCA) spectroscopy ensures a high resolution that allows precise measurements of the chemical changes and search on bands structures. Auger and ESCA measurements are directly compared. Measurements are effected on the same sample and practically at the same time without perturbing the ultra high vacuum. On the way, a direct comparison of both method sensitivity is made possible. The procedure makes also possible the surface cleaning using an ion gun incorporated inside the apparatus, by separating a thin film from the others and simultaneously analyzing the profile

No abstract available

[en] Electron spectroscopy is a well-established technique in physics and chemistry. In particular, its application to chemical analysis is developed to a degree that ESCA instruments are commercially available. The present paper is concerned with the less-popular application of ESCA in solid-state physics. The theoretical background and a number of examples of how this method has been applied in studies of energy bands in metal, alloys and semiconductors are presented. (author)

No abstract available

[en] Crystals of germanium and cadmium telluride have been produced having the characteristics corresponding to the low content of electrically active impurities and crystal defects. The crystals have been grown under conditions of an equilibrium diffusion-concentration interaction of the impurities and crystal defects, with the donor alloying and controlling the acceptors concentration. These crystals have been studied with the help of the mass-spectral analysis, the Hall effect, photoelectroscopy, spectral photoconductivity and losses of collection of a charge from an ionizing particle on gamma-detectors fabricated of the crystals. Herein the doped composition of the crystals has been determined, the concentrations of the shallow and deep acceptors and donors have been measured separately, the life-times of the electrons and holes have been measured, the energetic position and the concentration of the carrier capture levels have been determined. The crystals grown possess all the characteristic features of rather pure crystals. The results of the mass-spectral analysis have shown that in the cadmium telluride crystals the impurities are present within 10¹⁴ to 10¹⁷ cm^-3. Therefore, a deep ''self-refining'' of the crystal takes place, which proceeds by means of deactivation of the electrically active centers with their associating into electrically inactive complexes. Thus a fact of the deep ''self-refining'' of germanium- and cadmium telluride crystals is stated. It is presumed that such a ''self-refining'' can actually proceed practically in all the crystals