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Blanchard, B.
Microanalysis and scanning electron microscopy. Summer school, Saint-Martin-d'Heres, 11-16 Sep 19781978
Microanalysis and scanning electron microscopy. Summer school, Saint-Martin-d'Heres, 11-16 Sep 19781978
AbstractAbstract
[en] The physical phenomena which form the basis of the secondary ionic emission are briefly described. A few types of apparatuses which use this kind of source are presented and some applications as well as the problems posed by the analysis and the operating methods developed to overcome them are described
[fr]
On expose brievement les phenomenes physiques qui sont a la base de l'Emission Ionique secondaire. On presente quelques types d'appareils qui utilisent ce type de sources, et expose quelques applications ainsi que les problemes poses par l'analyse et les modes operatoires mis au point pour les surmonterOriginal Title
Analyse par emission ionique secondaire
Primary Subject
Source
Maurice, F.; Meny, L.; Tixier, R. (comps.); p. 507-523; 1978; p. 507-523; Editions de Physique; Orsay, France; Summer school on microanalysis and scanning electron microscopy; Saint-Martin-d'Heres, France; 11 - 16 Sep 1978
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AbstractAbstract
[en] This book is composed of three parts: (1) general courses on electron optics, electron emission, interactions between electrons and matter, X ray emission, X ray spectrometry, application of statistical methods in microanalysis, automation, (2) courses relating to particular disciplines: biology, geology, semiconductors, thin samples, metallurgy, (3) course on other microanalytical methods: spectroscopy of losses of energy in transmitted electrons, the laser probe in emission spectrography, the nuclear microprobe, the utilisation of Auger electrons, the analysis by secondary ionic emission
[fr]
Ce livre comprend 3 parties: des cours generaux (optique electronique, emission electronique, interactions electron-matiere, emission X, spectrometrie de rayons X, application des methodes statistiques en microanalyse, automatisation); des cours relatifs a des disciplines particulieres (biologie, geologie, semi-conducteurs, echantillons minces, metallurgie); des cours sur d'autres methodes de microanalyses (spectroscopie des pertes d'energies des electrons transmis, la sonde laser en spectrographie d'emission, la microsonde nucleaire, l'utilisation des electrons Auger, l'analyse par emission ionique secondaire)Original Title
Microanalyse et microscopie electronique a balayage
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Source
1978; 534 p; Editions de Physique; Orsay, France; Summer school on microanalysis and scanning electron microscopy; Saint-Martin-d'Heres, France; 11 - 16 Sep 1978
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Bresse, J.F.; Dupuy, M.
Microanalysis and scanning electron microscopy. Summer school, Saint-Martin-d'Heres, 11-16 Sep 19781978
Microanalysis and scanning electron microscopy. Summer school, Saint-Martin-d'Heres, 11-16 Sep 19781978
AbstractAbstract
[en] The use of scanning electron microscopy in semiconductors opens up a large field of use. The operating modes lending themselves to the study of semiconductors are the induced current, cathodoluminescence and the use of the potential contrast which can also be applied very effectively to the study of the devices (planar in particular). However, a thorough knowledge of the mechanisms of the penetration of electrons, generation and recombination of generated carriers in a semiconductor is necessary in order to attain a better understanding of the operating modes peculiar to semiconductors
[fr]
L'utilisation de la microscopie electronique a balayage dans les semiconducteurs ouvre un large domaine d'application. Les modes de fonctionnement qui se pretent a l'etude des semiconducteurs sont le courant induit, la cathodoluminescence et l'utilisation du contraste de potentiel qui s'applique egalement tres bien a l'etude des dispositifs (planar, notamment). Cependant, une connaissance approfondie des mecanismes de penetration des electrons, de generation et recombinaison des porteurs generes dans un semiconducteur est neccessaire pour atteindre une meilleure comprehension des modes de fonctionnement particuliers aux semiconducteursOriginal Title
La microscopie electronique a balayage dans les semiconducteurs
Primary Subject
Source
Maurice, F.; Meny, L.; Tixier, R. (comps.); p. 417-428; 1978; p. 417-428; Editions de Physique; Orsay, France; Summer school on microanalysis and scanning electron microscopy; Saint-Martin-d'Heres, France; 11 - 16 Sep 1978
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Maurice, F.
Microanalysis and scanning electron microscopy. Summer school, Saint-Martin-d'Heres, 11-16 Sep 19781978
Microanalysis and scanning electron microscopy. Summer school, Saint-Martin-d'Heres, 11-16 Sep 19781978
AbstractAbstract
[en] The X ray spectrum emitted by a target bombarded by a suitably accelerated beam of electrons mainly comes from the inelastic interactions between incident electrons and target atoms. The X spectrum comprises (a) the continuous spectrum (also called bremsstrahlung) constituted by a continuous distribution of the intensity depending on the wave length and (b) the characteristic spectrum represented by a series of rays of variable intensity and discrete wave length (Compton and Allison - 1935)
[fr]
Le spectre X emis par une cible bombardee par un faisceau d'electrons convenablement acceleres provient en majeure partie des interactions inelastiques entre electrons incidents et atomes de la cible. Le spectre X comporte d'une part le spectre continu (appele aussi bremstrahlung ou rayonnement de freinage) constitue par une distribution continue de l'intensite en fonction de la longueur d'onde et d'autre part le spectre caracteristique represente par une serie de raies d'intensite variable et de longueur d'onde discrete. (Compton et Allison (1935).)Original Title
Emission X
Primary Subject
Secondary Subject
Source
Maurice, F.; Meny, L.; Tixier, R. (comps.); p. 171-214; 1978; p. 171-214; Editions de Physique; Orsay, France; Summer school on microanalysis and scanning electron microscopy; Saint-Martin-d'Heres, France; 11 - 16 Sep 1978
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Engelmann, C.
Microanalysis and scanning electron microscopy. Summer school, Saint-Martin-d'Heres, 11-16 Sep 19781978
Microanalysis and scanning electron microscopy. Summer school, Saint-Martin-d'Heres, 11-16 Sep 19781978
AbstractAbstract
[en] The nuclear microprobe is an instrument bringing into use the main nuclear or atomic interactions generated by charged particles, suitably focused, emanating from Van de Graaff type accelerators, to wit: direct atomic excitation (emission of characteristic X ray radiation), elastic scattering of incident projectiles, the nuclear reactions induced by them. It is designed for spot analyses, and hence enables images to be obtained of the distribution of the elements detected on the surface of the samples examined
[fr]
La microsonde nucleaire est un instrument mettant en oeuvre les principales interactions nucleaires ou atomiques engendrees par des particules chargees, convenablement focalisees, issues d'accelerateurs du type Van de Graaff, a savoir: l'excitation atomique directe (emission du rayonnement X caracteristique); la diffusion elastique des projectiles incidents; les reactions nucleaires induites par ces derniers. Elle est concue en vue d'analyses ponctuelles, et permet, par voie de consequence, d'obtenir les images de la repartition des elements detectes a la surface des echantillons examinesOriginal Title
La microsonde nucleaire. Principe, performances et exemples d'applications
Primary Subject
Source
Maurice, F.; Meny, L.; Tixier, R. (comps.); p. 497-501; 1978; p. 497-501; Editions de Physique; Orsay, France; Summer school on microanalysis and scanning electron microscopy; Saint-Martin-d'Heres, France; 11 - 16 Sep 1978
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AbstractAbstract
[en] The principal metallurgical uses of the scanning electron microscope and the microprobe described here employ images obtained on a CRT from an electron signal or X rays. The various electron signals are the back scattered electrons, secondary electrons and absorbed electrons. The differences in the intensity of thee signals with the acceleration tension E0, the inclination angle β, the atomic number Z of the target and any potential applied to the sample give rise to contrasts: atomic number contrast, given by the sample current or the back scattered electrons; topographical contrast, given by the emission of the secondary electrons Δ that vary with α (the angle between the normal to the surface and the direction of the incident beam)
[fr]
Les principales applications metallurgiques du microscope electronique a balayage et de la microsonde traitees ici utilisent des images obtenues sur un tube cathodique a partir d'un signal electronique ou de rayons X. Les differents signaux electroniques sont les electrons retrodiffuses, les electrons secondaires et les electrons absorbes. Les variations de l'intensite de ces signaux en fonction de la tension d'acceleration E0, de l'angle d'inclinaison β, du nombre atomique Z de la cible et de l'eventuel potentiel applique a l'echantillon donnent naissance a des contrastes: contraste de nombre atomique, donne par le courant echantillon ou les electrons retrodiffuses; contraste de topographie, donne par l'emission des electrons secondaires Δ qui varie avec α (angle compris entre la normale a la surface et la direction du faisceau incident)Original Title
Les applications metallurgiques - la fractographie
Primary Subject
Source
Maurice, F.; Meny, L.; Tixier, R. (comps.); p. 451-464; 1978; p. 451-464; Editions de Physique; Orsay, France; Summer school on microanalysis and scanning electron microscopy; Saint-Martin-d'Heres, France; 11 - 16 Sep 1978
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Langeron, J.P.
Microanalysis and scanning electron microscopy. Summer school, Saint-Martin-d'Heres, 11-16 Sep 19781978
Microanalysis and scanning electron microscopy. Summer school, Saint-Martin-d'Heres, 11-16 Sep 19781978
AbstractAbstract
[en] The primary electron bombardment induces the emission of back scattered or secondary electrons. Their intensity is high against that corresponding to Auger electrons. This is why Auger spectrometry extended as from 1967 only, when Harris finalized a system of energy modulation of the primary electron beam making it possible to obtain on the derived curve dN(E)/dE = f(E) a satisfactory signal to background ratio for a primary electron beam intensity in the vicinity of a microampere. It is the value of this signal to background ratio that limits the sensitivity of the Auger spectrometric system: 0.1 to 1% according to the elements
[fr]
Le bombardement electronique primaire provoque egalement l'emission d'electrons retrodiffuses ou secondaires; leur intensite est elevee devant celle correspondant aux electrons Auger. C'est pourquoi la spectrometrie Auger ne s'est developpee qu'a partir de 1967 lorsque Harris a mis au point un systeme de modulation en energie du faisceau d'electrons primaires permettant d'obtenir sur la courbe derivee dN(E)/dE = f(E) un rapport signal sur bruit satisfaisant pour une intensite du faisceau d'electrons primaires voisine du microampere. C'est la valeur de ce rapport signal sur bruit qui limite la sensibilite de la spectrometrie Auger: 0,1 a 1% selon les elementsOriginal Title
Utilisation des electrons Auger en microanalyse
Primary Subject
Source
Maurice, F.; Meny, L.; Tixier, R. (comps.); p. 503-506; 1978; p. 503-506; Editions de Physique; Orsay, France; Summer school on microanalysis and scanning electron microscopy; Saint-Martin-d'Heres, France; 11 - 16 Sep 1978
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Henoc, J.; Maurice, F.
Microanalysis and scanning electron microscopy. Summer school, Saint-Martin-d'Heres, 11-16 Sep 19781978
Microanalysis and scanning electron microscopy. Summer school, Saint-Martin-d'Heres, 11-16 Sep 19781978
AbstractAbstract
[en] The determination of the mass concentration of the components of a sample is the subject of the following discussions: selection of lines, choice of the acceleration tension of the electrons, selection of the beam current, selection of the control sample, determination of the intensities of the emerging characteristic radiation. Two kinds of correction methods may be considered. The relative ease of the 2AF method and the satisfactory results that ensue mean that this correction method is much employed in the analysis of massive targets. This is a completely analytical technique, several versions of which have been programmed on the computer
[fr]
La determination de la concentration massique des constituants d'un echantillon fait l'objet des discussions suivantes: choix des raies, choix de la tension d'acceleration des electrons, choix du courant de faisceau, choix du temoin, mesure des intensites du rayonnement caracteristique emergent. Deux types de methodes de correction peuvent etre envisages. La relative simplicite de la methode 2AF et les resultats satisfaisants qui en decoulent font que cette methode de correction est fort utilisee dans l'analyse des cibles massives. C'est une technique entierement analytique dont plusieurs versions ont ete programmees sur ordinateurOriginal Title
Pratique de l'analyse quantitative sur echantillons massifs
Primary Subject
Source
Maurice, F.; Meny, L.; Tixier, R. (comps.); p. 219-272; 1978; p. 219-272; Editions de Physique; Orsay, France; Summer school on microanalysis and scanning electron microscopy; Saint-Martin-d'Heres, France; 11 - 16 Sep 1978
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AbstractAbstract
[en] The purpose of this course is to ensure that the origin of the quantities handled in mycroanalysis and in electron microscopy is correctly understood. The quantum theory of diffusion makes it possible to give the physical foundations of the diffusion cross section, ionization and slowing down fondamental formulations. The developments which follow concern solely amorphous materials, therefore the interaction of a flux of incident particles and a diffusing centre (atom) contained in the unit volume will be considered. The plasmons, linked to the collective oscillations of valency electrons; the phonons, asociated with the thermal movement of a periodical structure and, in general, the diffraction phenomena will not be dealt with here. The general knowledge having been acquired, it is necessary to become familiar with its practical uses and the Monte-Carlo technique, because of its flexibility, is particularly suitable for reaching this objective. Its principle will be described and the model of electron penetration in a semi-infinite target and in thin samples will be developed in succession
[fr]
Le but de ce cours est de bien faire comprendre l'origine des quantites que l'on manipule en microanalyse et en microscopie electronique. La theorie quantique de la diffusion permet de donner les fondements physiques des formules fondamentales de la section efficace de diffusion, de la section efficace d'ionisation et du ralentissement. Les developpements qui suivent concernent uniquement les materiaux amorphes, on considerera donc l'interaction d'un flux de particules incidentes et d'un centre diffuseur (atome) continu dans le volume unitaire. Les plasmons, lies aux oscillations collectives des electrons de valence; les phonons, associes a l'agitation thermique d'une structure periodique et, d'une maniere generale, les phenomenes de diffraction ne seront pas traites ici. L'aquisition des notions generales effectuee, il convient de se familiariser avec leur utilisation pratique: la technique de Monte-Carlo, par sa souplesse, est particulierement apte a atteindre cet objectif. Nous decrirons son principe et nous developperons successivement le modele de penetration des electrons dans une cible semi-infinie et dans les echantillons mincesOriginal Title
Interactions electrons-matiere
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Secondary Subject
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Maurice, F.; Meny, L.; Tixier, R. (comps.); p. 123-163; 1978; p. 123-163; Editions de Physique; Orsay, France; Summer school on microanalysis and scanning electron microscopy; Saint-Martin-d'Heres, France; 11 - 16 Sep 1978
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Colliex, C.; Trebbia, P.
Microanalysis and scanning electron microscopy. Summer school, Saint-Martin-d'Heres, 11-16 Sep 19781978
Microanalysis and scanning electron microscopy. Summer school, Saint-Martin-d'Heres, 11-16 Sep 19781978
AbstractAbstract
[en] Among the various signals which, in a transmission electron microscope, result from the interactions between the primary beam of well defined energy E0 and the sample, the spectrum of the energy distribution of the electrons transmitted contains useful informations on the chemical and physical properties of the sample. Consequently the adaptation of an energy dispersive system on an electron microscope enables new fields of research to be investigated, particularly a localised chemical analysis technique with a space resolution scale equal to that of the electron microscope. It is this second aspect that we suggest describing in particular here. Already, this technique appears to be indispensable in the problems arising from the analysis of very small quantities of matter: detection limits in the order of 10-19 to 10-20 g (around 100 to 1000 atoms) would seem to be resonably possible
[fr]
Dans un microscope electronique par transmission, parmi les differents signaux qui resultent de l'interaction entre le faisceau primaire d'energie bien definie E0 et l'echantillon, le spectre de la distribution energetique des electrons transmis contient des informations utiles concernant les proprietes chimiques et physiques de l'echantillon. Par consequent, l'adaptation d'un systeme dispersif en energie sur un microscope elecronique permet d'aborder de nouveaux domaines de recherche, en particulier une technique d'analyse chimique localisee, avec une echelle de resolution spatiale equivalente a celle du microscope electronique. C'est ce second aspect que nous nous proposons de decrire plus particulierement ici. Cette technique semble d'ores et deja s'imposer pour les problemes d'analyse de tres petits volumes de matiere: des limites de detection de l'ordre de 10-19 a 10-20 g, c'est-a-dire environ 100 a 1000 atomes, semblent pouvoir etre envisagees raisonnablementOriginal Title
La microanalyse par spectrocopie des pertes d'energie des electrons transmis
Primary Subject
Source
Maurice, F.; Meny, L.; Tixier, R. (comps.); p. 469-482; 1978; p. 469-482; Editions de Physique; Orsay, France; Summer school on microanalysis and scanning electron microscopy; Saint-Martin-d'Heres, France; 11 - 16 Sep 1978
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