[en] In experiments on light Raman scattering (RS) oscillations of experimentally effective g*-factor of conduction electrons in n-InSb in magnetic fields below the quantum limit were observed for the first time. The nonmonotonous dependence of the effective g*-factor on magnetic field observed in InSb found its qualitative explanation within the framework of a simple theory, taking into account variation of Landau level population and dispersion law nonparabolicity. It is evidant that this consideration can be extended to cover higher Landau levels, when the g* factor will be a function oscillating with the H field with a period decreasing at H→O

[en] Using a model of the ideal associated solution the method for calculating the temperature dependence of the Ksub(j)sup(L) dissociation constant of congruently melting compounds in a liquid phase on the basis of the liquidus curvature radius values in the melting point is developed. The proposed method is tested for cadmium and gallium antimonides. According to the results of estimation of the Ksub(j)sup(L) temperature dependence variations of the dissociation degree αsub(L) or the compounds considered on heating is established. A qualitative agreement of the αsub(L)=f(T) dependence with the results of the investigation of physicochemical properties in the adequate double liquid systems is noted

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[en] The method of computer model-statistical forecasting was used for modeling of physicochemical properties of rare earth antimonides of RE₅-Sb₃ composition first in the approximation of electron structure of the initial element atoms and then in the approximation of electronic structure of atoms in a compound. Physicochemical properties of rare earth antimonides of the given composition (density, melting point, characteristic Debye temperature, thermal expansion coefficient, magnetic moment) determined by calculation methods correlate satisfactorily with properties of these compounds determined experimentally (the maximal error 10-11 rel. %)

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[en] Some experimental results are given of the pressure dependence of Hall and Shubnikov-de Haas effects in InSb doped with S and Se. For T = 4.2, 300, and 519 K a decrease of the free-carrier concentration is observed due to the filling of the resonant impurity states lying highly in the conduction band. Interpreting the data with the simple Koster-Slater model good agreement of the theory with experiment is obtained. More accurate conclusions could be drawn from such fits if the density of states in the conduction band and its dependence on pressure and temperature were better known. (author)

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[en] Studies of the chemical bond and calculation of CdSb zone structure using the method of localized orbitals (LO) are conducted. It is shown that application of the LO method with account of spatial angles between bond lines in CdSb crystals made it possible to plot hybrid orbitals of Cd and Sb atoms by experimental data, to simplify calculations of band spectrum, to classify energy bands corresponding to different bonds between atoms and to explain behaviour of different impurities in CdSb from the standpoint of the chemical bond

No abstract available