No abstract available

[en] Using the Bodnar model, the effective mass, density of states, and g-factor of Cd₃As₂ are calculated. It is found that the g-factor is considerably more anisotropic than the effective masse, but decreases sharply with energy in all directions. (author)

[en] Individual and combined solubilities of alloying elements of donor (S, Se) and acceptor types (Zn) in InAs have been investigated. The boundaries of solubility were determined with the aid of the microstructure analysis and measurement of microhardness of cast specimens subjected to a homogeneizing annealing at arsenic vapour pressure equal to pressure of dissociation of InAs. It was shown that the solubility reaches its maximum for an equiatomic ratio of alloying elements of donor and acceptor types. Values of solubility of were calculated from equations of isotherms of solubility of donors and acceptors in semiconductor. A satisfactory agreement of calculated and experimental data was obtained, this bearing out the applicability of the model of neutral complex and analytical equations of solubility isotherms to the analysis of donor-acceptor interaction in the InAs-Zn-S and InAs-Zn-Se systems

[en] In this paper are given the results of studying the Shubnikov-de Haas and Hall effects in cadmium arsenide with a concentration of 1x1x10²⁴ to 9x7x10²⁴ m^-3. The measurements have been conducted in a constant magnetic field up to 9x5 T at 4x2 deg K. The total electron concentration exceeds that of the charge carriers (nsub(sdh)) participating in the Shubnikov-de Haas effect. In single crystal samples with a concentration above 4x10²⁴ m^-3, the Hall constant (R) varies with the magnetic field (B)

[en] Single crystals α'-Cd₃As₂ were grown from vapour phase. A possibility of their application for Nernst-Ettingshausen elements was investigated. One of the main parameters of a receiver, sensitivity sigma, has been expressed in terms of crystal parameters. versus concentration and reduced Fermi level eta was found. Detector sensitivity versus temperature and thermal flow are discussed

No abstract available

[en] Gas discharge phenomenon stabilization of the semiconductor electrode was opened in 1973. It is concluded that, for a flat structure of gas discharge replacing one of the two metallic electrodes high resistance semiconductor, changes current distribution in a gas discharge: it becomes stable and manageable. Distribution of emission gas-discharge current in a flat gas discharge cell has been experimentally investigated where plate arsenide GaAs used as a semiconductor electrode.

[en] It is shown that the frequently used linear relation between the supercooling and equlibrium As concnetration is of limited validity. Expressions for the growth rate and the thickness of the LPE layers as a function of time are derived using a more accurate relation between the supercooling and the As concentration. New solutions for the growth rate and the thickness of the layers grown from a melt finite thickness are derived. The physical conditions necessary to avoid homogeneous nucleation in the melt are discussed in detail. It is shown that the discrepancy between the theory and the experimental growth rates observed by Doi et al. and by Hsieh can be satisfactorily explained by making use of the relations derived in this paper and taking into account appropriate temperature variations of diffusion coefficient of As in the melt. (orig.)

[en] A correlation is observed between the lack of electrical activation of Te-implanted GaAs at higher Te-concentrations, and the presence of a quadrupole-split component in the Moessbauer spectrum. This quadrupole multiplet is tentatively associated with the DX-center. It is also observed in Te-doped Al_xGa_1-xAs. The vibrational properties of the impurity atoms in this site are studied. (author) 18 refs., 2 figs

No abstract available