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AbstractAbstract
[en] Work on the structure of the weak neutral current is described covering the V, A and S, P, T cases
Primary Subject
Source
Perlmutter, A. (ed.); p. 297-327; 1975; Plenum Publishing Corp; New York; Orbis scientist meeting; Coral Gables, Florida, USA; 21 Jan 1975
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Book
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Conference
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INIS IssueINIS Issue
Belloir, Jean-Marc
Institut Superieur de l'Aeronautique et de l'Espace, 10 Avenue Edouard Belin, 31400 Toulouse (France); CEA, DAM-DCRE (France)2016
Institut Superieur de l'Aeronautique et de l'Espace, 10 Avenue Edouard Belin, 31400 Toulouse (France); CEA, DAM-DCRE (France)2016
AbstractAbstract
[en] CMOS image sensors are envisioned for an increasing number of high-end scientific imaging applications such as space imaging or nuclear experiments. Indeed, the performance of high-end CMOS image sensors has dramatically increased in the past years thanks to the unceasing improvements of microelectronics, and these image sensors have substantial advantages over CCDs which make them great candidates to replace CCDs in future space missions. However, in space and nuclear environments, CMOS image sensors must face harsh radiation which can rapidly degrade their electro-optical performances. In particular, the protons, electrons and ions travelling in space or the fusion neutrons from nuclear experiments can displace silicon atoms in the pixels and break the crystalline structure. These displacement damage effects lead to the formation of stable defects and to the introduction of states in the forbidden bandgap of silicon, which can allow the thermal generation of electron-hole pairs. Consequently, non ionizing radiation leads to a permanent increase of the dark current of the pixels and thus a decrease of the image sensor sensitivity and dynamic range. The aim of the present work is to extend the understanding of the effect of displacement damage on the dark current increase of CMOS image sensors. In particular, this work focuses on the shape of the dark current distribution depending on the particle type, energy and fluence but also on the image sensor physical parameters. Thanks to the many conditions tested, an empirical model for the prediction of the dark current distribution induced by displacement damage in nuclear or space environments is experimentally validated and physically justified. Another central part of this work consists in using the dark current spectroscopy technique for the first time on irradiated CMOS image sensors to detect and characterize radiation-induced silicon bulk defects. Many types of defects are detected and two of them are identified, proving the applicability of this technique to study the nature of silicon bulk defects using image sensors. In summary, this work advances the understanding of the nature of the radiation-induced defects responsible for the dark current increase in space or nuclear environments. It also leads the way to the design of more advanced dark current prediction models, or to the development of mitigation strategies in order to prevent the formation of the responsible defects or to allow their removal. (author)
[fr]
Les imageurs CMOS representent un outil d'avenir pour de nombreuses applications scientifiques de haut vol, telles que l'observation spatiale ou les experiences nucleaires. En effet, ces imageurs ont vu leurs performances demultipliees ces dernieres annees grace aux avancees incessantes de la microelectronique, et presentent aussi des avantages indeniables qui les destinent a remplacer les CCDs dans les futurs instruments spatiaux. Toutefois, en environnement spatial ou nucleaire, ces imageurs doivent faire face aux attaques repetees de particules pouvant rapidement degrader leurs performances electro-optiques. En particulier, les protons, electrons et ions presents dans l'espace ou les neutrons de fusion nucleaire peuvent deplacer des atomes de silicium dans le volume du pixel et en rompre la structure cristalline. Ces effets de deplacement peuvent former des defauts stables introduisant des etats d'energie dans la bande interdite du silicium, et ainsi conduire a la generation thermique de paires electron-trou. Par consequent, ces radiations non-ionisantes produisent une augmentation permanente du courant d'obscurite despixels de l'imageur et donc a une diminution de leur sensibilite et de leur dynamique. L'objectif des presents travauxest d'etendre la comprehension des effets de deplacement sur l'augmentation du courant d'obscurite dans les imageurs CMOS. En particulier, ces travaux se concentrent sur l'etude de la forme de la distribution de courant d'obscurite en fonction du type, de l'energie et du nombre de particules ayant traverse l'imageur, mais aussi en fonction des caracteristiques de l'imageur. Ces nombreux resultats permettent de valider physiquement et experimentalement un modele empirique de prediction de la distribution du courant d'obscurite pour une utilisation dans les domaines spatial et nucleaire. Une autre partie majeure de ces travaux consiste a utiliser pour la premiere fois la technique de spectroscopie de courant d'obscurite pour detecter et caracteriser individuellement les defauts generes par les radiations non-ionisantes dans les imageurs CMOS. De nombreux types de defauts sont detectes et deux sont identifies, prouvant l'applicabilite de cette technique pour etudier la nature des defauts cristallins generes par les effets de deplacement dans le silicium. Ces travaux avancent la comprehension des defauts responsables de l'augmentation du courant d'obscurite en environnement radiatif, et ouvrent la voie au developpement de modeles de prediction plus precis, voire de techniques permettant d'eviter la formation de ces defauts ou de les faire disparaitreOriginal Title
Spectroscopie du courant d'obscurite induit par les effets de deplacement atomique des radiations spatiales et nucleaires dans les capteurs d'images CMOS a photodiode pincee
Primary Subject
Source
18 Nov 2016; 272 p; 318 refs.; Available from the INIS Liaison Officer for France, see the 'INIS contacts' section of the INIS website for current contact and E-mail addresses: http://www.iaea.org/inis/Contacts/; Also available from La bibliotheque ISAE-SUPAERO, documentation@isae.fr (France); Micro et Nanosystemes
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Report
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Thesis/Dissertation
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Duong Van Phi; Nguyen Mong Giao.
Joint Inst. for Nuclear Research, Dubna (USSR). Lab. of High Energy1981
Joint Inst. for Nuclear Research, Dubna (USSR). Lab. of High Energy1981
AbstractAbstract
[en] Together with charge currents, neutral currents are obtained using transformation generators in the iitrinsic space of 8-dimensional space. From the spinor field lagrangian in the unified space and from the local calibration transformation using the commutation ratio of reduced generators Jsup((V-A)=J) currents are derived. Here J+, J- are the charged currents and J3 denotes the neutral currents. Then the lagrangian of the weak interaction looks like αsub(w)=1/4(J)sup(2)
[ru]
Primary Subject
Source
1981; 4 p; 6 refs.
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Report
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Cline, D.B.; Resvanis, L.K.
Stanford Linear Accelerator Center, Menlo Park, CA (USA)1988
Stanford Linear Accelerator Center, Menlo Park, CA (USA)1988
AbstractAbstract
[en] Two techniques are proposed to test the universality of the μ/minus/e weak neutral current interaction of large Q2. Both techniques require large statistics and some degree of longitudinal e+,e/sup minus/ polarization but are otherwise feasible at PEP
Primary Subject
Source
1988; 12 p; Available from NTIS, PC A03/MF A01; 1 as DE88015160; Portions of this document are illegible in microfiche products.
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Report
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AbstractAbstract
[en] The results of a 100 h c-w test of a 620 mA dc ion source are briefly discussed. It was found that, once the discharge was triggered, the filament was no longer needed and could be completely turned off
Primary Subject
Source
Jameson, R.A. (ed.); Los Alamos Scientific Lab., N.Mex. (USA); p. 59-60; May 1978; p. 59-60; Space charge in linear accelerators workshop; Los Alamos, NM, USA; 31 Oct - 2 Nov 1977
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Report
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AbstractAbstract
[en] On the basis of author's ''revised'' Dirac-theory formulation (predicting a negative rest mass for anti-fermions) two general current selection rules are derived: the first one, that charged vector currents may only have a V-A form; the second one, that neutral vector currents may only have a V form
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Journal Article
Journal
Lett. Nuovo Cim; v. 18(7); p. 224-226
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AbstractAbstract
[en] An overview of the experimental approaches to study weak interactions using traps is given. Both charged and neutral weak currents are considered.
Primary Subject
Source
Copyright (c) 2003 Kluwer Academic Publishers; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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AbstractAbstract
[en] The discussion of parity violation in atoms due to neutral weak current includes the basic Weinberg framework and the detection of atomic parity violation in various possible experiments. 19 references
Primary Subject
Secondary Subject
Source
Risley, J.S. (ed.); p. 50-61; 1976; p. 50-61; University of Washington Press; Seattle; 9. international conference on physics of electronic and atomic collisions; Seattle, Washington, USA; 24 Jul 1975
Record Type
Book
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Conference
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AbstractAbstract
[en] The effects of spatial parity nonconservation in atomic Auger decays arising because of the existence of electron-nucleus weak neutral currents are considered. The magnitudes of the quantities characterizing the degree of parity nonconservation are of order approx.10-8
Primary Subject
Source
Cover-to-cover translation of Yadernaya Fizika (USSR).
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Journal Article
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AbstractAbstract
[en] The present status of the experimental situation in neutral current interactions is reviewed. The basic properties of neutral currents have been investigated in four main fields: inclusive reactions, single pion production, elastic scattering from protons, and elastic scattering from electrons. New results presented at the Symposium are compared to those previously known. The properties of neutral currents are discussed in the light of all these results. Failure to observe neutral current with a corresponding strength in atomic transitions is discussed. Experiments are presented which are likely to solve this dilemma. (orig.)
[de]
Es wird ein Ueberblick ueber den aktuellen Stand der experimentellen Untersuchung der Wechselwirkungen des neutralen Stroms gegeben. Die grundlegenden Eigenschaften der neutralen Stroeme wurden in vier Hauptbereichen untersucht: inklusive Reaktionen, Produktion einzelner Pionen, elastische Streuung an Protonen und elastische Streuung an Elektronen. Neue, auf dem Symposium vorgestellte Daten werden mit bereits bekannten Daten verglichen. Die Eigenschaften der neutralen Stroeme werden im Licht all dieser Ergebnisse diskutiert. Die Tatsache, dass die neutralen Stroeme mit entsprechender Staerke in atomaren Uebergaengen bisher nicht beobachtet wurden, ist Gegenstand der Diskussion. Experimente werden angegeben, die moeglicherweise dieses Dilemma aufloesen. (orig.)Primary Subject
Secondary Subject
Source
Gutbrod, F. (ed.); Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany, F.R.); Bundesministerium fuer Forschung und Technologie, Bonn-Bad Godesberg (Germany, F.R.); International Union of Pure and Applied Physics; p. 785-810; 1977; p. 785-810; International symposium on lepton and photon interactions at high energies; Hamburg, Germany, F.R; 25 - 31 Aug 1977; AED-CONF--77-656-037
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Miscellaneous
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