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AbstractAbstract
No abstract available
Original Title
Kristallicheskaya struktura kadmievogo ortogermanata Cd2 ) 7GeO4{. )]
Source
published in summary form only.
Record Type
Journal Article
Journal
Kristallografiya; v. 17(no.1); p. 217-219
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AbstractAbstract
[en] We report on the infrared spectroscopic studies of the normal-state electronic response of rare-earth ternary platinum germanide superconductor La_2Pt_3Ge_5. We analyzed the temperature-dependent optical conductivity spectra using the Drude-Lorentz oscillator model. We found that the two Drude responses with distinct scattering rates are required to explain the charge dynamics at 10 K while a single Drude mode could reproduce the far-infrared conductivity at higher temperatures. Our results indicated the two-band character of the electronic structure and highlighted the disparate temperature evolution of the electrodynamics of the two electronic states
Source
16 refs, 4 figs
Record Type
Journal Article
Journal
Progress in Superconductivity and Cryogenics; ISSN 1229-3008;
; v. 17(4); p. 12-15

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AbstractAbstract
No abstract available
Original Title
Opredelenie koehffitsientov prelomleniya vakuumnykh kondensatov optichdskoj tolshchiny germanatov r.z.eh. po spektram ikh otrazheniya
Primary Subject
Source
For English translation see the journal Inorg. Mater.
Record Type
Journal Article
Journal
Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy; v. 10(4); p. 628-630
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AbstractAbstract
No abstract available
Original Title
Kristallicheskaya struktura Cd-germanata, Cd2Ge3O7(OH)3, s novym tipom lentochnogo radikala (Ge3O7(OH)2)beskonechnost'
Primary Subject
Source
For English translation see the journal Sov. Phys. - Crystallogr.
Record Type
Journal Article
Journal
Kristallografiya; v. 20(1); p. 42-45
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] Electron structure transformation under irreversible α→β polymorphous transitions under high pressure in molybdenum and tungsten digermanides is investigated by X-ray spectral and X-ray electron methods. It is shown that after α→WGe2→βWGe2 phase transition the hybride Wd+GeP-states grow above the Fermi level by increasing their energy and transfer to the free state zone. The change of charge state of nuclei after completion of α→β polymorphous transformations in MoGe2 and WGe2 is evaluated
Original Title
Preobrazovanie ehlektronnogo stroeniya pri neobratimykh α→β polimorfnykh prevrashcheniyakh pod davleniem v digermanidakh molibdena i vol'frama
Primary Subject
Record Type
Journal Article
Journal
Dopovidi Akademii Nauk Ukrains'koj RSR. Seriya A, Fiziko-Tekhnichni i Matematichni Nauki; ISSN 0002-3531;
; CODEN DUKAB; (no.8); p. 63-67

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Bonnell, D.W.
Rice Univ., Houston, Tex. (USA)1972
Rice Univ., Houston, Tex. (USA)1972
AbstractAbstract
No abstract available
Primary Subject
Source
1972; 139 p; University Microfilms Order No. 72-26,395.; Thesis. (Ph.D.).
Record Type
Report
Literature Type
Thesis/Dissertation
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Zhao, Zhiqian; Li, Yongliang; Wang, Guilei; Du, Anyan; Gu, Shihai; Li, Yan; Zhang, Qingzhu; Xu, Gaobo; Ma, Xueli; Wang, Xiaolei; Yang, Hong; Luo, Jun; Li, JunFeng; Yin, Huaxiang; Wang, Wenwu, E-mail: liyongliang@ime.ac.cn, E-mail: wangwenwu@ime.ac.cn2019
AbstractAbstract
[en] In this work, a novel three-layer SiGe strain relaxed buffer/strained Si0.5Ge0.5 layer stacking structure is systematically investigated. The novel three-layer graded SiGe strain relaxed buffer, whose Ge concentration increased from bottom to top by roughly 10% with an in situ annealing after each layer grown, can effectively constrain the threading dislocation in the strain relaxed buffer layer. Moreover, a chemical mechanical planarization process can be applied to the strain relaxed buffer to further improve its surface roughness. A high crystal quality and atomically smooth surface Si0.5Ge0.5 layer can be successfully realized on the novel chemical mechanical planarization-treated three-layer SiGe strain relaxed buffer. This strategy can attain at least 50 nm and 0.6% compressive strained Si0.5Ge0.5 layer and its quantification of the strain level is confirmed by utilizing the scanning moiré fringe imaging technique. It can be seen that this novel structure can provide a better mobility and larger width for the FinFET or nanowire SiGe channel device.
Primary Subject
Source
Copyright (c) 2019 Springer Science+Business Media, LLC, part of Springer Nature; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Journal of Materials Science. Materials in Electronics; ISSN 0957-4522;
; CODEN JSMEEV; v. 30(15); p. 14130-14135

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AbstractAbstract
[en] The mode of a novel SiGe-OI optical waveguide is analyzed, and its single-mode conditions are derived. The Ge content and structure parameters of SiGe-OI optical waveguides are respectively optimized. Under an operation wavelength of 1300 nm, the structures of SiGe-OI rib optical waveguides are built and analyzed with Optiwave software, and the optical field and transmission losses of the SiGe-OI rib optical waveguides are analyzed. The optimization results show that when the structure parameters H, h, W are respectively 500 nm, 250 nm, 500 nm and the Ge content is 5%, the total power loss of SiGe-OI rib waveguides is 0.3683 dB/cm considering the loss of radiation outside the waveguides and materials, which is less than the traditional value of 0.5 dB/cm. The analytical technique for SiGe-OI optical waveguides and structure parameters computed by this paper are proved to be accurate and computationally efficient compared with the beam propagation method (BPM) and the experimental results. (semiconductor devices)
Primary Subject
Source
Available from http://dx.doi.org/10.1088/1674-4926/30/8/084008; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Journal of Semiconductors; ISSN 1674-4926;
; v. 30(8); [5 p.]

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Reference NumberReference Number
INIS VolumeINIS Volume
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Kuprysyuk, V.; Semuso, N.; Gladyszevskii, R.; Staszczuk, P.
Materials of 46. Scientific Assembly of Polish Chemical Society and Association of Engineers and Technicians of Chemical Industry. Volume 22003
Materials of 46. Scientific Assembly of Polish Chemical Society and Association of Engineers and Technicians of Chemical Industry. Volume 22003
AbstractAbstract
No abstract available
Original Title
Detale strukturalne glinogermankow metali ziem rzadkich podgrupy itru
Primary Subject
Source
Wydzial Chemii Uniwersytetu Marii Curie-Sklodowskiej, Lublin (Poland); Polskie Towarzystwo Chemiczne, Lublin (Poland); Stowarzyszenie Inzynierow i Technikow Przemyslu Chemicznego, Oddzial w Pulawach (Poland); 1368 p; ISBN 83-901844-7-8;
; 2003; p. 677; 46. Scientific Assembly of Polish Chemical Society and Association of Engineers and Technicians of Chemical Industry; 46. Zjazd Naukowy Polskiego Towarzystwa Chemicznego i Stowarzyszenia Inzynierow i Technikow Przemyslu Chemicznego; Lublin (Poland); 15-18 Sep 2003; Available at Polskie Towarzystwo Chemiczne, ul. Freta 16, Warsaw (PL)

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Miscellaneous
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Conference
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Original Title
Sintez i svojstva gallatov i germanatov redkozemel'nykh ehlementov
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Journal Article
Journal
Soobshcheniya Akademii Nauk Gruzinskoj SSR; v. 63(3); p. 601-605
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