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J. Amer. Ceram. Soc; v. 55(11); p. 575-578
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[en] The energy-band structure of InN is predicted using the pseudofunction method (a first-principles, self-consistent local-density scheme). Some significant differences exist between this electronic structure and extrapolated empirical tight-binding theory for InN
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[en] Published in summary form only
Original Title
Estudo sobre a fotoeletroquimica de eletrodos semicondutores de p-InP
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Source
Sociedade Brasileira de Fisica, Rio de Janeiro; 299 p; 1988; p. 240; 11. National Meeting on Condensed Matter Physics; Caxambu, MG (Brazil); 9-13 May 1988; Available from the Library of Comissao Nacional de Energia Nuclear, RJ, Brazil
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[en] Specificity of radiative recombination of indium arsenide implanted with elements of the 4 group was investigated in a broad temperature range (4.2 - 100 deg K). Within this temperature range the radiative recombination occurs through the impurity levels connected with implanation of the 4 group elements into InAs. At 4.2 deg K the emissive channels are donor-acceptor transitions, while at 77 deg K band-to-band and conductivity band - accepting level transitions contribute to the emission. Gradual transition from donor-acceptor to band-to-band recombination is observed in the temperature range 4.2 - 100 deg K
Original Title
Izluchatel'naya rekombinatsiya v arsenide indiya, implantirovannom ehlementami 4 gruppy
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Secondary Subject
Source
For English translation see the journal Sov. Phys. -Semicond.
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Journal Article
Journal
Fizika i Tekhnika Poluprovodnikov; v. 9(5); p. 901-903
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AbstractAbstract
No abstract available
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Innsbruck Univ. (Austria); vp; 1985; p. FR-1.5; Fourth international conference on hot electrons in semiconductors; Innsbruck (Austria); 8-12 Jul 1985; Published in summary form only.
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Miscellaneous
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Chatterji, D.
Purdue Univ., Lafayette, Ind. (USA)1972
Purdue Univ., Lafayette, Ind. (USA)1972
AbstractAbstract
No abstract available
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Source
1972; 197 p; University Microfilms Order No. 72-21,168.; Thesis. (Ph.D.).
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Report
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Thesis/Dissertation
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AbstractAbstract
No abstract available
Original Title
Protecao ao substrato de InP no crescimento epitaxial de camadas quaternarias de In sub(1-x) Ga sub(x) As sub(y) P sub(1-y)
Source
34. Annual Meeting of the Brazilian Society for the Advancement of Science; Campinas, SP (Brazil); 6 - 14 Jul 1982; Published in summary form only.
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Journal Article
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Journal
Cienc. Cult. (Sao Paulo) Supl; v. 34(7); p. 321
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Chamberlain, J.M.; Reeder, A.A.; Claessen, L.M.; Rikken, G.L.J.A.; Wyder, P.
Fourth international conference on hot electrons in semiconductors1985
Fourth international conference on hot electrons in semiconductors1985
AbstractAbstract
No abstract available
Primary Subject
Source
Innsbruck Univ. (Austria); vp; 1985; p. TU-4.7; Fourth international conference on hot electrons in semiconductors; Innsbruck (Austria); 8-12 Jul 1985; Published in summary form only.
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Miscellaneous
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Usak, Pavol, E-mail: Pavol.Usak@savba.sk2011
AbstractAbstract
[en] The paper reports on the role of the typical mapping errors in measurement of the lateral sheet current distribution Iy(x) in a superconducting tape. The sheet current is calculated indirectly, from the mapped data of the self magnetic field of the superconducting layer. The field is generated by transport or induced current in a tape. In model calculations examples of the influence of the different types of errors on false shaping of the lateral sheet current profile are given. The field mapping is made outside and over the tape. The lateral profile Bz(x, z) of the magnetic field component, perpendicular to the superconducting layer, is input to the Biot-Savart inverse procedure. In the experiment we have used superconducting tape as a sample and an InSb Hall probe with active surface 20 x 20 μm2 as a magnetic field sensor. We demonstrate the details, together with obstacles and errors encountered in measurement and subsequent evaluation. The demonstrations serve for the reader to be aware of limits in interpretation of the measured data and to overcome the natural barrier in understanding, insight and use of this fruitful method.
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Source
S0953-2048(11)72429-0; Available from http://dx.doi.org/10.1088/0953-2048/24/4/045007; Country of input: International Atomic Energy Agency (IAEA)
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AbstractAbstract
No abstract available
Original Title
Obrazovanie submikronnykh yamok rosta pri gazofazovoj ehpitaksii arsenida indiya
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Source
Short note. For English translation see the journal Soviet Physics Journal (USA).
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Journal Article
Journal
Izvestiya Vysshikh Uchebnykh Zavedenij, Fizika; ISSN 0021-3411;
; v. 25(4); p. 110-111

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