No abstract available

No abstract available

[en] Manufacturing techniques for nuclear detectors using semiconductors are constantly advancing, and a large range of models with different specificities and characteristics are available. After a theoretical reminder, this report describes the main types of detectors, their working and their preferential use. A comparative table guides the neophyte reader in his choice

No abstract available

[en] Reference is made to windows for evacuated and sealed radiation detectors of the type which, in operation, need to be maintained at low temperatures. Such detectors are conventionally provided with vacuum-tight windows that allow the passage of radiation but serve as barriers against contamination. These windows have to withstand the pressure of the atmosphere, as well as inevitable slight mishandling of the detectors. Be is usually used as window material, but where ultra-soft X-rays have to be detected a Be window cannot be made thin enough. A plastic material, such as polypropylene, may not be sufficiently robust or vacuum-tight. The efficiency of the window can also be affected by deposition of material on it. This may arise by sputtering or from small amounts of oil in the atmosphere. Replacement of a window presents problems in that the detector must be allowed to rise to a temperature permitting it to be handled, and after replacement of the window it must be returned to its original low temperature before re-use. Such temperature changes may adversely affect the performance of the detector. A detector assembly is described that lessens these problems. (U.K.)

[en] Use of semiconductor X-ray and gamma detectors for coating thickness and composition measurements is described. Advantages and limitations of these detectors are shown through examples of tests developed at the Y-12 Plant. (U.S.)

[en] The full-energy peak efficiency of a Si(Li) detector has been experimentally determined over the photon energy range 3-26 keV for use in accurate ion-induced X-ray cross-section measurements. The efficiency uncertainties are +-2% to +-4% for 4.5-9.9 keV photons - the energy region of primary interest in the present work. The techniques utilised are described in detail since it was found that the use of absolute theoretical efficiences can lead to errors in excess of 30% over the whole efficiency curve with even greater errors appearing below about 3 keV. Recent electron-capture data are used to calculate the yield of 3.1 keV Ag L X-ray from the decay of a calibrated ¹⁰⁹Cd source in order to extend the efficiency curve down to 3 keV. The use of fluorescence sources as a novel way of accurately measuring efficiencies in the photon energy region 1-4 keV is outlined. (orig.)

No abstract available

[en] Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for ⁵⁷Co and ⁶⁰Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for ²³⁹Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

[en] To overcome the problem of charge carrier trapping in semiconductor nuclear radiation detectors. The possibility to characterize the starting material by charge carrier lifetime measurements performed at low temperature has been investigated, in order to select the crystals suitable for γ-ray detectors. This work is divided in four sections dealing first with the concept of charge carrier lifetime tau in semiconductors, then with the different experimental techniques which have been developed to determine tau. Then, these methods are applied on silicon, germanium P and HP (high purity) cadmium telluride. Finally, it is shown that a theoretical and experimental correlation exists between the performance of Ge(Li) spectrometers and the charge carrier lifetime as measured in the raw material at 77 deg K