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Tavendale, A.J.; Lawson, E.M.
Fifth AINSE nuclear physics conference, 11-13th February, 1974, Australian National University, Canberra1974
Fifth AINSE nuclear physics conference, 11-13th February, 1974, Australian National University, Canberra1974
AbstractAbstract
No abstract available
Source
Australian Inst. of Nuclear Science and Engineering, Lucas Heights; p. 12; 1974; 5. AINSE nuclear physics conference; Canberra, Australia; 11 Feb 1974; abstract only.
Record Type
Report
Literature Type
Conference
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INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
No abstract available
Source
Published in summary form only. Letter-to-the-editor.
Record Type
Journal Article
Journal
Atomkernenergie Kerntechnik; ISSN 0004-7198;
; v. 40(3); p. 209

Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Aussel, J.P.
CEA Etablissement de la Vallee du Rhone, 30 - Bagnols-sur-Ceze (France)1986
CEA Etablissement de la Vallee du Rhone, 30 - Bagnols-sur-Ceze (France)1986
AbstractAbstract
[en] Manufacturing techniques for nuclear detectors using semiconductors are constantly advancing, and a large range of models with different specificities and characteristics are available. After a theoretical reminder, this report describes the main types of detectors, their working and their preferential use. A comparative table guides the neophyte reader in his choice
[fr]
Les techniques de fabrication des detecteurs nucleaires a base de materiaux semi-conducteurs evoluant sans cesse, on trouve sur le marche un eventail etendu de modeles, aux specificites et aux caracteristiques tres differentes. Ce document a pour objet, apres quelques brefs rappels theoriques, de decrire les principaux types de detecteurs, leur fonctionnement ainsi que leur utilisation preferentielle. Un tableau comparatif guidera le lecteur neophyte dans ses choixOriginal Title
Mesure des rayonnements ionisants monographie sur les detecteurs a semi-conducteurs
Source
Jun 1986; 80 p
Record Type
Report
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Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
No abstract available
Record Type
Journal Article
Journal
IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci; v. NS-20(1); p. 494-499
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] Reference is made to windows for evacuated and sealed radiation detectors of the type which, in operation, need to be maintained at low temperatures. Such detectors are conventionally provided with vacuum-tight windows that allow the passage of radiation but serve as barriers against contamination. These windows have to withstand the pressure of the atmosphere, as well as inevitable slight mishandling of the detectors. Be is usually used as window material, but where ultra-soft X-rays have to be detected a Be window cannot be made thin enough. A plastic material, such as polypropylene, may not be sufficiently robust or vacuum-tight. The efficiency of the window can also be affected by deposition of material on it. This may arise by sputtering or from small amounts of oil in the atmosphere. Replacement of a window presents problems in that the detector must be allowed to rise to a temperature permitting it to be handled, and after replacement of the window it must be returned to its original low temperature before re-use. Such temperature changes may adversely affect the performance of the detector. A detector assembly is described that lessens these problems. (U.K.)
Source
3 Jun 1976; 5 p; GB PATENT DOCUMENT 1438117/B/
Record Type
Patent
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Snow, S.G.
Oak Ridge Y-12 Plant, Tenn. (USA)1975
Oak Ridge Y-12 Plant, Tenn. (USA)1975
AbstractAbstract
[en] Use of semiconductor X-ray and gamma detectors for coating thickness and composition measurements is described. Advantages and limitations of these detectors are shown through examples of tests developed at the Y-12 Plant. (U.S.)
Original Title
Coating thickness and composition measurements
Secondary Subject
Source
26 Mar 1975; 30 p
Record Type
Report
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Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57Co and 60Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)
Original Title
Polovodicove detektory ionizujiciho zareni
Source
1982; 12 p; Czechoslovak State Standard based on CMEA Standard ST SEV 2671-80.
Record Type
Report
Literature Type
Standard
Report Number
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Fowler, I.L.; McMath, T.A.
Proceedings of the international symposium on cadmium telluride a material for gamma-ray detectors
Proceedings of the international symposium on cadmium telluride a material for gamma-ray detectors
AbstractAbstract
No abstract available
Source
Siffert, P.; Cornet, A. (eds.); Centre National de la Recherche Scientifique, 67 - Strasbourg (France). Centre de Recherches Nucleaires; p. 31.1-31.15; nd; Centre de Recherches Nucleaires; Strasbourg, France; International symposium on cadmium telluride a material for gamma-ray detectors; Strasbourg, France; 29 Jun 1971
Record Type
Book
Literature Type
Conference
Country of publication
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INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] The full-energy peak efficiency of a Si(Li) detector has been experimentally determined over the photon energy range 3-26 keV for use in accurate ion-induced X-ray cross-section measurements. The efficiency uncertainties are +-2% to +-4% for 4.5-9.9 keV photons - the energy region of primary interest in the present work. The techniques utilised are described in detail since it was found that the use of absolute theoretical efficiences can lead to errors in excess of 30% over the whole efficiency curve with even greater errors appearing below about 3 keV. Recent electron-capture data are used to calculate the yield of 3.1 keV Ag L X-ray from the decay of a calibrated 109Cd source in order to extend the efficiency curve down to 3 keV. The use of fluorescence sources as a novel way of accurately measuring efficiencies in the photon energy region 1-4 keV is outlined. (orig.)
Source
Record Type
Journal Article
Journal
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms; ISSN 0168-583X;
; v. 233(3); p. 534-544

Country of publication
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INIS VolumeINIS Volume
INIS IssueINIS Issue
Karlovac, N.
Tennessee Univ., Knoxville (USA)1973
Tennessee Univ., Knoxville (USA)1973
AbstractAbstract
No abstract available
Source
1973; 156 p; University Microfilms Order No. 74-11,258.; Thesis (Ph. D.).
Record Type
Report
Literature Type
Thesis/Dissertation
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
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