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AbstractAbstract
No abstract available
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Journal Article
Literature Type
Progress Report
Journal
Nuclear Science and Engineering; v. 43 p. 350-352
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AbstractAbstract
No abstract available
Original Title
Poluchenie i nekotorye svojstva dvuvodnogo arsenata skandiya
Primary Subject
Record Type
Journal Article
Journal
Zhurnal Neorganicheskoj Khimii; v. 16(6); p. 1538-1541
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INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] This work is devoted to the technique application of lock-in infrared thermography in the shipbuilding and ocean engineering industry. For this purpose, an exploratory study to find the optimized test conditions is carried out by the design of experiments. It has been confirmed to be useful method that the phase contrast images were quantified by a reference image and weighted by defect hole size. Illuminated optical intensity of lower or medium strength give a good result for getting a phase contrast image. In order to get a good phase contrast image, lock-in frequency factors should be high in proportion to the illuminated optical intensity. The integration time of infrared camera should have been inversely proportional to the optical intensity. The other hand, the difference of specimen materials gave a slightly biased results not being discriminative reasoning
Primary Subject
Source
12 refs, 11 figs, 2 tabs
Record Type
Journal Article
Journal
Journal of the Korean Society for Nondestructive Testing; ISSN 1225-7842;
; v. 31(2); p. 157-164

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Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
No abstract available
Original Title
Characteristiques statiques des regulateurs de vitesse a thyristors
Primary Subject
Source
1970; 31 p; 5 figs.
Record Type
Report
Report Number
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] An ultra-precise infrared microscope consisting of a high-resolution infrared objective lens and infrared sensors is utilized successfully to obtain location information on the plane and depth of local heat sources causing defects in a semiconductor device. In this study, multi-layer semiconductor chips are analyzed for the positional information of heat sources by using a lock-in infrared microscope. Optimal conditions such as focal position, integration time, current and lock-in frequency for measuring the accurate depth of the heat sources are studied by lock-in thermography. The location indicated by the results of the depth estimate, according to the change in distance between the infrared objective lens and the specimen is analyzed under these optimal conditions
Primary Subject
Source
4 refs, 11 figs
Record Type
Journal Article
Journal
Journal of the Korean Society for Nondestructive Testing; ISSN 1225-7842;
; v. 35(3); p. 200-205

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Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Evans, J.H.
Oak Ridge National Lab., Tenn. (USA)1971
Oak Ridge National Lab., Tenn. (USA)1971
AbstractAbstract
No abstract available
Primary Subject
Source
Mar 1971; 58 p
Record Type
Report
Report Number
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Li, T; Almond, D P; Rees, D A S, E-mail: D.P.Almond@bath.ac.uk2011
AbstractAbstract
[en] The thermographic images of laser-heated spots or lines are perturbed by nearby cracks, providing NDE techniques for crack detection. Scanning with a laser line, rather than a laser spot, results in a substantial reduction in inspection time. 3D finite difference modelling results are presented that show the sensitivity of the laser-line thermography technique to cracks of varying lengths, depths and openings. A novel crack imaging technique is presented that is based on assembling the second spatial derivative thermal images of a scanned laser line. Experimental results show the new technique to image cracks with openings as small as a few micrometres. The scanning time of the laser-line thermography technique is shown to be over an order of magnitude smaller than that of the laser-spot thermography technique whilst producing crack images of similar quality
Primary Subject
Source
S0957-0233(11)58526-6; Available from http://dx.doi.org/10.1088/0957-0233/22/3/035701; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Agostini, J.P.
CEA Centre d'Etudes Nucleaires de Saclay, 91 - Gif-sur-Yvette (France). Div. de Chimie)1971
CEA Centre d'Etudes Nucleaires de Saclay, 91 - Gif-sur-Yvette (France). Div. de Chimie)1971
AbstractAbstract
No abstract available
Original Title
Contribution aux etudes d'obtention d'eau lourde par le procede bitherme a H2S
Primary Subject
Source
Oct 1971; 121 p
Record Type
Report
Report Number
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] We present the optical properties of zinc-blende CdSe and ZnSe ¯lms, which have been determined by using vacuum ultra-violet spectroscopic ellipsometry (SE) whose spectral range is from 0.7 to 9.0 eV at room temperature. We observed new critical point energies, whose observation by SE has not been reported so far, in the spectral range above 6 eV. We interpret these new peaks as a previously reported transition from a band-structure calculation. The values of the critical point energies were determined from numerically calculated second energy derivatives of these data.
Primary Subject
Source
13 refs, 3 figs, 2 tabs
Record Type
Journal Article
Journal
Journal of the Korean Physical Society; ISSN 0374-4884;
; v. 50(3); p. 806-809

Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
No abstract available
Original Title
Svojstva poroshkov, poluchennykh plazmennym raspyleniem
Primary Subject
Record Type
Journal Article
Literature Type
Progress Report
Journal
Porosh. Met., Akad. Nauk Ukr. SSR; (no.3); p. 4-8
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
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