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AbstractAbstract
[en] In the same way that atomic calculations have been used previously to extract bare ionic pseudopotentials, self-consistent bulk calculations can be used to construct screened atomic pseudopotentials. We use such a method to construct screened nonlocal atomic pseudopotentials for InP. A series of bulk, local-density-approximation (LDA) calculations are performed on a few InP crystal structures, covering a range of unit-cell volumes, to produce bulk potentials {VLDA(G)}. By solving a set of linear equations, we extract from these crystalline potentials the corresponding screened atomic open-quotes spherical LDAclose quotes (SLDA) potentials vSLDAα(|q|) for sites α=In or P. In combination with the nonlocal part of the usual LDA pseudopotentials, these SLDA potentials give band structures and wave functions that are virtually indistinguishable from the self-consistent LDA results for bulk InP. In the next step, we apply linear changes to the local SLDA potentials (while keeping the nonlocal potentials at their LDA values), to fit the band structures to experiment. Interestingly, this removal of LDA eigenvalue errors requires only small and subtle changes in the potential emdash mostly an upshift in the region near the cation core, with nearly no change at the bond center. Furthermore, the linear changes to the SLDA potentials result mostly in an upshift of the conduction bands with little effect on the valence bands. Because only small changes in the potential suffice to fit the bands to experimental results, the wave functions remain virtually unchanged relative to those in the original LDA calculation. Hence, we obtain semiempirical pseudopotentials which can produce ab initio LDA-quality wave functions with experimentally measured band structures, effective masses, and deformation potentials. (Abstract Truncated)
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AbstractAbstract
No abstract available
Original Title
Protecao ao substrato de InP no crescimento epitaxial de camadas quaternarias de In sub(1-x) Ga sub(x) As sub(y) P sub(1-y)
Source
34. Annual Meeting of the Brazilian Society for the Advancement of Science; Campinas, SP (Brazil); 6 - 14 Jul 1982; Published in summary form only.
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Cienc. Cult. (Sao Paulo) Supl; v. 34(7); p. 321
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AbstractAbstract
No abstract available
Original Title
Nekotorye fizicheskie svojstva difosfidov kadmiya i tsinka
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Deposited article; for English translation see the journal Russ. J. Phys. Chem.
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Journal Article
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Zhurnal Fizicheskoj Khimii; v. 52(6); p. 1555-1556
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AbstractAbstract
[en] Published in summary form only
Original Title
Estudo sobre a fotoeletroquimica de eletrodos semicondutores de p-InP
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Sociedade Brasileira de Fisica, Rio de Janeiro; 299 p; 1988; p. 240; 11. National Meeting on Condensed Matter Physics; Caxambu, MG (Brazil); 9-13 May 1988; Available from the Library of Comissao Nacional de Energia Nuclear, RJ, Brazil
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AbstractAbstract
No abstract available
Original Title
Kristallicheskaya struktura Cd7P10
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Short note; for English translation see the journal Journal of Structural Chemistry (USA).
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Journal Article
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Zhurnal Strukturnoj Khimii; ISSN 0136-7463;
; v. 20(1); p. 146-148

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Chamberlain, J.M.; Reeder, A.A.; Claessen, L.M.; Rikken, G.L.J.A.; Wyder, P.
Fourth international conference on hot electrons in semiconductors1985
Fourth international conference on hot electrons in semiconductors1985
AbstractAbstract
No abstract available
Primary Subject
Source
Innsbruck Univ. (Austria); vp; 1985; p. TU-4.7; Fourth international conference on hot electrons in semiconductors; Innsbruck (Austria); 8-12 Jul 1985; Published in summary form only.
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Xu Wenlan; Shen, S.C.
International Centre for Theoretical Physics, Trieste (Italy)1987
International Centre for Theoretical Physics, Trieste (Italy)1987
AbstractAbstract
[en] The vibration spectra induced by different impurities in semiconductor III-V-compounds are discussed. The numerical results for the case of Gallium Phosphide are given and compared with experimental results. (author). 10 refs, 2 figs, 2 tabs
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Sep 1987; 12 p
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Report
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AbstractAbstract
[en] Joint consideration is given to the fluorescent K-bands and K-spectra of phosphorus absorption in glass-like and crystalline CdGeP2. Moreover, the same spectra have been obtained for the crystalline ZnGeP2. In the crystal-glass transition the emission spectrum varies appreciably, the variation being still more pronounced for the absorption spectrum. The observed variations of the X-ray spectra point to the fact that the absence of the long-range order in the glass leads to a strong spreading of the energy distribution of the electron state density both in the valence and the conduction bands. This spreading increases along with the electron state energy
Original Title
Rentgenospektral'noe issledovanie izmeneniya ehlektronnoj struktury CdGeP2 pri perekhode ot kristallicheskogo k stekloobraznomu
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Doklady Akademii Nauk SSSR; v. 233(3); p. 342-344
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Zanin, I.E.; Alejnikov, K.B.; Afanas'ev, M.M.; Alekseeva, E.V.; Antipin, M.Yu.
XXV International Chugaev conference on coordination chemistry and II Youth conference-school Physicochemical methods in chemistry of coordination compounds. Abstracts2011
XXV International Chugaev conference on coordination chemistry and II Youth conference-school Physicochemical methods in chemistry of coordination compounds. Abstracts2011
AbstractAbstract
No abstract available
Original Title
Kristallokhimiya i khimicheskaya svyaz' v tetrafosfidakh tsinka i kadmiya
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Source
Rossijskaya Akademiya Nauk, Moscow (Russian Federation); Otdelenie Khimii i Nauk o Materialakh RAN, Moscow (Russian Federation); Ministerstvo Obrazovaniya i Nauki RF, Moscow (Russian Federation); Nauchnyj Sovet RAN po Neorganicheskoj Khimii, Moscow (Russian Federation); Rossijskij Fond Fundamental'nykh Issledovanij, Moscow (Russian Federation); Inst. Obshchej i Neorganicheskoj Khimii im. N.S. Kurnakova RAN, Moscow (Russian Federation); Inst. Khimii Rastvorov RAN, Ivanovo (Russian Federation); Ivanovskij Gosudarstvennyj Khimiko-Tekhnologicheskij Univ., Ivanovo (Russian Federation); Rossijskoe Khimicheskoe Obshchestvo im. D.I. Mendeleeva, Moscow (Russian Federation); 562 p; ISBN 978-5-85229-397-8;
; 2011; p. 96-97; 25. International Chugaev conference on coordination chemistry; XXV Mezhdunarodnaya Chugaevskaya konferentsiya po koordinatsionnoj khimii i II Molodezhnaya konferentsiya-shkola Fiziko-khimicheskie metody v khimii koordinatsionnykh soedinenij; Suzdal (Russian Federation); 6-11 Jun 2011; 2. Youth conference-school Physicochemical methods in chemistry of coordination compounds; XXV Mezhdunarodnaya Chugaevskaya konferentsiya po koordinatsionnoj khimii i II Molodezhnaya konferentsiya-shkola Fiziko-khimicheskie metody v khimii koordinatsionnykh soedinenij; Suzdal (Russian Federation); 6-11 Jun 2011

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[en] The frequency dependence of noise levels in ion-implanted devices of InP follows Hooge's relationship [Phys. Lett. A-29, 139 (1969)]. The noise levels vary in proportion to the square of the terminal voltages, and decrease linearly with the frequency and the total carriers throughout the ranges from 0.1 Hz to 100 kHz. The Hooge parameter is αsub(H) = 1.5 x 10-4. (author)
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