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AbstractAbstract
[en] The specification discloses a process for forming a superconductor/semiconductor junction structure having optimized low-temperature current transport properties by first providing a substrate of a chosen semiconductor material having an atomically clean surface. A layer of a first chosen superconducting material is deposited on or above the surface of the substrate to a predetermined thickness. Either before or after the formation of this layer of the first superconducting material, a region of a second chosen superconducting material is formed between the surface of the substrate and the layer of the first superconducting material to serve as an interfacial reaction barrier to prevent the reaction between the surface of the substrate and the first chosen superconducting material at the interface thereof which would otherwise result in the formation of an undesired non-superconducting material at the interface. By preventing this undesired interfacial reaction, an optimized low-temperature current transport path is maintained across the interface and certain device performance characteristics can be optimized. Josephson junction superconducting devices and super-Schottky devices may be formed by this disclosed process
Primary Subject
Source
22 Jan 1985; v p; US PATENT DOCUMENT 4,495,510/A/; U.S. Commissioner of Patents, Washington, D.C. 20231, USA, $.50; PAT-APPL-444939.
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Patent
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AbstractAbstract
[en] Cross-bar arrays are usually used for the high density application of resistive random access memory (RRAM) devices. However, cross-talk interference limits an increase in the integration density. In this paper, the Zener diode is proposed as a selection device to suppress the sneak current in bipolar RRAM arrays. Measurement results show that the Zener diode can act as a good selection device, and the sneak current can be effectively suppressed. The readout margin is sufficiently improved compared to that obtained without the selection device. Due to the improvement for the reading disturbance, the size of the cross-bar array can be enhanced to more than 103 × 103. Furthermore, the possibility of using a write-once-read-many-times (WORM) cross-bar array is also demonstrated by connecting the Zener diode and the bipolar RRAM in series. These results strongly suggest that using a Zener diode as a selection device opens up great opportunities to realize high density bipolar RRAM arrays. (paper)
Primary Subject
Source
Available from http://dx.doi.org/10.1088/0022-3727/47/2/025103; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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Chen, Xin; Zheng, Xiaodong; Wu, Chunhai, E-mail: xiaodongzheng@zju.edu.cn2014
AbstractAbstract
[en] We describe a portable instrument that measures the average luminance coefficient of a road surface, Q0, in the field. The design employs a modified integrating hemisphere with light-emitting diode lamps as light sources and a calibrated charge-coupled device luminance meter with an observation angle of 1° as the detector. The diameter and weight of the hemisphere are 50 cm and approximately 8 kg, respectively. After first demonstrating proof of concept of the instrument, we calibrated the prototype with two methods and evaluated the performance by comparing its measurement results with those obtained by a gonioreflectometer for a series of samples. The performance characteristics of the instrument are appropriate for in situ Q0 measurement. (paper)
Primary Subject
Source
Available from http://dx.doi.org/10.1088/0957-0233/25/3/035203; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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Beznosko, D.; Blazey, G.; Dyshkant, A.; Francis, K.; Kubik, D.; Rykalin, V.; Tartaglia, M.; Zutshi, V.
Fermi National Accelerator Lab., Batavia, IL (United States). Funding organisation: US Department of Energy (United States)2005
Fermi National Accelerator Lab., Batavia, IL (United States). Funding organisation: US Department of Energy (United States)2005
AbstractAbstract
[en] The experimental results on the performance of the extruded scintillator and WLS fiber, and various LEDs in the magnetic fields of 1.8T and 2.3T respectively, are reported. The methodic used is being described
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Source
1 May 2005; 5 p; AC--02-76CH03000; Available from PURL: https://www.osti.gov/servlets/purl/15017171-yxoHsm/native/
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Report
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Popescu, M; Simandan, I D, E-mail: mpopescu@infim.ro2010
AbstractAbstract
[en] The electrical switching in solid compositions based on chalcogenide materials is discussed. Different mechanisms proposed for switching effect are reviewed. A new description of the switching phenomenon is done. The switching is regarded as due to formation and breaking of the links between the dendrites of crystalline nuclei in bulk materials, as a consequence of the energy pumped by an electrical field. This mechanism explains the very short switching time (<20ns), the possibility to get smart memories based on multisteps of resistivity and the high number of cycles supported by the cell (1016).
Source
16 ISCMP: 16. international school on condensed matter physics - Progress in solid state and molecular electronics, ionics and photonics; Varna (Bulgaria); 29 Aug - 3 Sep 2010; Available from http://dx.doi.org/10.1088/1742-6596/253/1/012014; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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Conference
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Journal of Physics. Conference Series (Online); ISSN 1742-6596;
; v. 253(1); [13 p.]

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Essimbi, B Z; Jäger, D, E-mail: bessimb@yahoo.fr2012
AbstractAbstract
[en] In this paper, the generation of short electrical pulses based on nonlinear active wave propagation effects along the resonant tunneling diode transmission line is studied. The principle of operation is discussed and it is shown by computer experiments that an input rectangular pulse as well as a sinusoidal input signal can be converted into a set of output spikes, suitable for A/D conversion at millimeter wave frequencies.
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Source
Available from http://dx.doi.org/10.1088/0031-8949/85/03/035801; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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Physica Scripta (Online); ISSN 1402-4896;
; v. 85(3); [5 p.]

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AbstractAbstract
[en] Colourful lighting can be generated using various light sources, such as filament lamps, light emitting diodes (LED), and laser. In this work, we present a simple method to generate colourful lighting using three laser sources (red, green, and blue laser) and quantify the generated colours. We set up several laser sources and directed the entire laser beam onto white dove light bulb. We were able to generate 9 different colours and quantify the colour using modified calculation of colour coordinates of colour space diagram CIE 1931. Our simple calculation of colour coordinates agreed with colour appearance. To validate our method, we conducted a simple survey of 25 respondents. 5 out of 9 generated colours show agreement between our calculation method and survey. Thus our modified calculation method can be used to quantify colour lighting generated using three laser sources. (paper)
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Secondary Subject
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International Symposium on Frontier of Applied Physics; Banten (Indonesia); 1-2 Nov 2018; Available from http://dx.doi.org/10.1088/1742-6596/1191/1/012004; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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Conference
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Journal of Physics. Conference Series (Online); ISSN 1742-6596;
; v. 1191(1); [6 p.]

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AbstractAbstract
No abstract available
Original Title
Stand der Silizium Photomultiplier Entwicklung fuer die Astrophysik Experimente MAGIC und EUSO
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Journal Article
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Verhandlungen der Deutschen Physikalischen Gesellschaft; ISSN 0420-0195;
; CODEN VDPEAZ; v. 40(4); p. 184

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AbstractAbstract
[en] Optical Gaussian beam interaction with a one-dimensional temperature field in the form of a thermal wave in the Raman-Nath configuration is analyzed. For the description of the Gaussian beam propagation through the nonstationary temperature field the complex geometric optics method was used. The influence of the refractive coefficient modulation by thermal wave on the complex ray phase, path, and amplitude was taken into account. It was assumed that for detection of the modulated Gaussian beam parameters two types of detector can be used: quadrant photodiodes or centroidal photodiodes. The influence of such parameters as the size and position of the Gaussian beam waist, the laser-screen (detector) distance, the thermal wave beam position and width, as well as thermal wave frequency and the distance between the probing optical beam axis and source of thermal waves on the so-called normal signal was taken into account
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(c) 2009 Optical Society of America; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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External URLExternal URL
Freeman, J.; Green, D.; Ronzhin, A.
Fermi National Accelerator Lab., Batavia, IL (United States). Funding organisation: USDOE Office of Energy Research, Washington, DC (United States)1998
Fermi National Accelerator Lab., Batavia, IL (United States). Funding organisation: USDOE Office of Energy Research, Washington, DC (United States)1998
AbstractAbstract
[en] The 7-pixel HPD was studied in a 5 Tesla magnet. Several percents of the HPD signal increased when the magnetic field was parallel or almost parallel to the HPD electric field
Source
Jan 1998; 15 p; CONTRACT AC02-76CH03000; ALSO AVAILABLE FROM OSTI AS DE98052272; NTIS; US GOVT. PRINTING OFFICE DEP
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Report
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