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[en] The measurement of vacuum ultraviolet spectra (500-2000A) from a target plasma device is described. The plasma spectra, impurities, impurity sources and radiation mechanism of plasma gun are analysed

[en] Spatial heterodyne spectrographs combine high spectral resolution with large etendue in a compact instrument. This combination makes them useful for studies of extended diffuse sources requiring velocity resolution or the separation of closely packed emission lines, while their small size makes them suitable for platforms ranging from ground-based observatories to satellites. Improvements in optical element and detector capabilities have expanded opportunities for SHS in the VUV, where its combination of size, resolution, and etendue have not been available. Here we discuss the basics of the SHS technique and how an instrument may be designed to study various emission line sources in the solar system

[en] A compact monochromator has been designed to utilize recently developed free-standing XUV transmission gratings. Tests using a condensed spark source of far UV radiation show that this monochromator, with 20-μm slits, is capable of 0.08-nm resolution at 30 nm in the first order. A physical description of the system and test results are presented

[en] Spark gap triggering with laser unltraviolet radiation (λ=308 nm) transmitted through a light guide is studied. In laser plasma production on tantalum cathode spark gap initiation delay time is ∼ 10 ns and initiation instability - ≤ 1 ns

No abstract available

No abstract available

[en] Experimental and theoretical spectroscopic methods have been combined to disentangle the fundamental mechanism of VUV induced fragmentation of the three isomers of nitroimidazole radiosensitisers. (paper)

[en] The extreme outer Galaxy (EOG), the region with a Galactic radius of more than 18 kpc, is known to have a very low metallicity, about one-tenth that of the solar neighborhood. We obtained the deep near-infrared (NIR) images of two very young (∼0.5 Myr) star-forming clusters that are two of the most distant embedded clusters in the EOG. We find that in both clusters the fraction of stars with NIR excess, which originates from the circumstellar dust disk at radii of ≤0.1 AU, is significantly lower than those in the solar neighborhood. Our results suggest that most of the stars forming in the low-metallicity environment experience disk dispersal at an earlier stage (<1 Myr) than those forming in the solar metallicity environment (as much as ∼5-6 Myr). Such a rapid disk dispersal may make the formation of planets difficult, and the shorter disk lifetime with a lower metallicity, could contribute to the strong metallicity dependence of the well-known 'planet-metallicity correlation', which states that the probability of a star hosting a planet increases steeply with stellar metallicity. The reason for the rapid disk dispersal could be the increase of the mass accretion rate and/or the effective far-ultraviolet photoevaporation due to the low extinction; however, another unknown mechanism for the EOG environment could be contributing significantly.

[en] The source is an integral part of an extreme ultraviolet lithography (EUVL) tool. Such a source, as well as the EUVL tool, has to fulfil extremely high demands both technical and cost oriented. The EUVL tool operates at a wavelength in the range 13-14 nm, which requires a major re-thinking of state-of-the-art lithography systems operating in the DUV range. The light production mechanism changes from conventional lamps and lasers to relatively high temperature emitting plasmas. The light transport, mainly refractive for DUV, should become reflective for EUV. The source specifications are derived from the customer requirements for the complete tool, which are: throughput, cost of ownership (CoO) and imaging quality. The EUVL system is considered as a follow up of the existing DUV based lithography technology and, while improving the feature resolution, it has to maintain high wafer throughput performance, which is driven by the overall CoO picture. This in turn puts quite high requirements on the collectable in-band power produced by an EUV source. Increased, due to improved feature resolution, critical dimension (CD) control requirements, together with reflective optics restrictions, necessitate pulse-to-pulse repeatability, spatial stability control and repetition rates, which are substantially better than those of current optical systems. All together the following aspects of the source specification will be addressed: the operating wavelength, the EUV power, the hot spot size, the collectable angle, the repetition rate, the pulse-to-pulse repeatability and the debris induced lifetime of components