Filters
Results 1 - 10 of 3102
Results 1 - 10 of 3102.
Search took: 0.025 seconds
Sort by: date | relevance |
AbstractAbstract
[en] In this work, the design and implementation of Sb-free short wavelength strain-compensated quantum cascade lasers in the 3–4 μm spectral range is presented. Due to the presence of highly strained AlAs-barrier layers, the optimization of the epitaxial growth process is firstly discussed. The used active region design is then presented together with the observed laser performance. Watt-level room temperature emission at 3.3 μm is shown for Fabry–Perot devices and laser operation in pulsed mode is observed above 350 K. The laser performance is comparable with Sb-containing quantum cascade lasers. Spectral tuning of the lasers in an external cavity configuration over more than 275 cm−1 is achieved with an emission wavelength as short as 3.15 μm. For the first time in this spectral range, results on single-mode buried heterostructure distributed feedback lasers are shown. (paper)
Source
Available from http://dx.doi.org/10.1088/0268-1242/27/4/045013; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show the ability to completely empty the dot of holes and control the charge occupation in the few-hole regime. The device should allow for control of individual hole spins in single and double quantum dots in GaAs
Primary Subject
Secondary Subject
Source
(c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
External URLExternal URL
Strasser, T.; Solterbeck, C.; Schattke, W.; Bartos, I.; Cukr, M.; Jiricek, P.; Fadley, Charles S.; Van Hove, Michel A.
Ernest Orlando Lawrence Berkeley National Lab., Advanced Light Source, Berkeley, CA (United States). Funding organisation: US Department of Energy (United States)2001
Ernest Orlando Lawrence Berkeley National Lab., Advanced Light Source, Berkeley, CA (United States). Funding organisation: US Department of Energy (United States)2001
AbstractAbstract
No abstract available
Source
LBNL/ALS--13419; AC03-76SF00098; Journal Publication Date: March 2001
Record Type
Journal Article
Journal
Journal of Electron Spectroscopy and Related Phenomena; ISSN 0368-2048;
; CODEN JESRAW; v. 114-116; [10 p.]

Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
No abstract available
Primary Subject
Source
(c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
External URLExternal URL
AbstractAbstract
[en] The pulse operation of two DEF GaAs junction lasers employing the fundamental grating order at 770K for double-heterostructures formed by both liquid and vapor phase epitaxy is described
Primary Subject
Record Type
Journal Article
Journal
Applied Optics; v. 13(12); p. 2742-2744
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] The semiconductor injection laser includes a thin inner GaAs p-n junction layer between two outer GaAlAs layers which are backed by further thin outer GaAlAs layers with a heavier doping of AlAs. This reduces optical losses. Optical energy is further confined within the inner layers and the lasing threshold reduced by added outer GaAs layers of low electrical and thermal resistivity
Original Title
Patent
Primary Subject
Source
7 Oct 1975; 4 p; US PATENT DOCUMENT 3,911,376
Record Type
Patent
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescence spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer.
Primary Subject
Source
Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] The self-consistent pseudopotential method has been applied to describe the electronic structure of the abrupt (110) interfaces of AlAs--GaAs, Ge--GaAs, and Ge--ZnSe system. These systems were chosen both for their technological interest as well as to study trends with ionicity. The method allows the study of existence, character, and density of interface states as well as allowing estimates of the conduction and valence-band discontinuities and the characterization of the bonding properties of the interface. The results indicate that the ideal structure may be stable for AlAs--GaAs, but the character of the bonds at the Ge--GaAs and Ge--ZnSe interfaces suggest unbalanced forces on the atoms which will lead to relaxation. It is suggested that, in addition to the change of ionicity, the change of crystal symmetry (diamond--zincblende) across the interface may be of central importance in these systems
Primary Subject
Record Type
Journal Article
Journal
Journal of Vacuum Science and Technology; v. 15(4); p. 1437-1443
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Cich, M.J.; Zhao, R.; Anderson, Erik H.; Weber, E.R.
Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (United States). Funding organisation: USDOE Director, Office of Science (United States)2002
Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (United States). Funding organisation: USDOE Director, Office of Science (United States)2002
AbstractAbstract
No abstract available
Primary Subject
Source
LBNL--49379; AC03-76SF00098; Available from Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US); Journal Publication Date: January 1, 2002
Record Type
Journal Article
Journal
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
[en] We report on first-principles calculations of spin-dependent quantum transport in a CrAs(0 0 1)/AlAs(0 0 1) heterogeneous junction and predict a strong diode effect of charge and spin current. The minority spin current is absolutely inhibited when the bias voltage is applied to the terminals of both CrAs and AlAs. The majority spin current is inhibited when the bias voltage is applied to the terminal of CrAs and 'relaxed' when the bias voltage is applied to the terminal of AlAs. The charge and spin current diode are promising for reprogrammable logic applications in the field of spintronics
Primary Subject
Source
S0304-8853(08)00947-5; Available from http://dx.doi.org/10.1016/j.jmmm.2008.09.009; Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
1 | 2 | 3 | Next |