Results 1 - 10 of 5970
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[en] The necessity for exact modelling and simulation data of the electrical characteristics of passive on-chip devices has become more and more important. The electrical performance of RF circuits is predominantly restricted by the passives. In this work the RF simulation and characterization for a new trench capacitor in a low loss environment are presented for the first time. The excellent accordance of the modelling data with the measured RF characteristics of this so-called SilCap (silicon capacitor) is shown. An analytical model has been developed which permits the exact circuit simulation of all relevant electrical quantities. The device simulation enables the optimization of the SilCap device geometries
[en] A novel MEMS accelerometer with grid strip capacitors is developed. The mechanical and electrical noise can be reduced greatly for the novel structure design. ANSOFT-Maxwell software was used to analyze the fringing electric field of the grid strip structure and its effects on the designed accelerometer. The effects of the width, thickness and overlapping width of the grid strip on the sensing capacitance are analyzed by using the ANSOFT-Maxwell software. The results show that the parameters have little effect on the characteristics of the presented accelerometer. The designed accelerometer was fabricated based on deep RIE and silicon-glass bonding processes. The preliminary tested sensitivities are 0.53 pF/g and 0.49 pF/g in the x and y axis directions, respectively. A resonator with grid strip structure was also fabricated whose tested quality factor is 514 in air, which proves that the grid strip structure can reduce mechanical noise. (semiconductor devices)
[en] This paper presents a controllable resistor, which is formed by a MOS-resistor working in the deep triangle region and an auxiliary circuit. The auxiliary circuit can generate the gate-source voltage which is proportional to the output current of an low dropout regulator for the MOS-resistor. Thus, the equivalent output resistance of the MOS-resistor is inversely proportional to the output current, which is a suitable feature for pole-zero tracking frequency compensation methods. By switching the type of the MOS-resistor and current direction through the auxiliary circuit, the controllable resistor can be suitable for different applications. Three pole-zero tracking frequency compensation methods based on a single Miller capacitor with nulling resistor, unit-gain compensation cell and pseudo-ESR (equivalent serial resistor of load capacitor) power stage have been realized by this controllable resistor. Their advantages and limitations are discussed and verified by simulation results.
[en] We describe a method for the exact data linearization of the charging curve of a capacitor. The calculations required are as simple as those involved in the linearization of the discharging curve, allowing analysis of the charging process using the graphical and fitting tools available in introductory physics courses. The proposed method can also be generalized to university-level problems involving biased exponential curves as an input parameter estimation method for nonlinear data fitting procedures. (paper)
[en] This paper provides a mixed continuous-time/discrete-time, single-loop, 4th-order, 4-bit audio-band sigma delta ADC with capacitor digital self-calibration for RC spread compensation. This ADC combines the benefits of CT and DT circuits, and the self-calibration control circuits compensate for the variation of the RC product in the continuous-time integrator and for variation in the sampling frequency. Measurement results show that the peak SNR of this ADC reaches 102 dB and the total power consumption is less than 30 mW.
[en] We evaluate the distribution of waiting times between electrons emitted by a driven mesoscopic capacitor. Based on a wave packet approach we obtain analytic expressions for the electronic waiting time distribution and the joint distribution of subsequent waiting times. These semi-classical results are compared to a full quantum treatment based on Floquet scattering theory and good agreement is found in the appropriate parameter ranges. Our results provide an intuitive picture of the electronic emissions from the driven mesoscopic capacitor and may be tested in future experiments.