[en] Optical modulation response is used to study the influence of radiative, Shockley-Read-Hall, and Auger recombination processes on the minority carrier lifetime in a mid-wave infrared InAs/InAsSb superlattice. A comparison of calculated and measured temperature dependencies shows that the lifetime is influenced mainly by radiative recombination at low temperatures, resulting in an increase of the minority carrier lifetime from 1.8 μs at 77 K to 2.8 μs at 200 K. At temperatures above 200 K, Auger recombination increases rapidly and limits the lifetime. Shockley-Read-Hall limited lifetimes on the order of 10 μs are predicted for superlattices with lower background doping concentration

[en] A Si waveguide integrated with a lateral p–i–n diode forms a popular optical amplitude and a phase modulator. Three experimental techniques were introduced to measure the effective carrier lifetime in the Si modulator: the static optical absorption method, the reverse recovery method and the transient optical absorption method. A simple theoretical model was established to estimate the effective carrier lifetime in the Si modulator from its geometry

[en] Time-resolved band-to-band photoluminescence offers a quick and contactless technique for determining the photoexcited free carrier lifetime in GaAs samples with deep traps

[en] We investigate the impact of copper on the light induced minority-carrier lifetime degradation in various crystalline silicon materials. We demonstrate here that the presence of neither boron nor oxygen is necessary for the degradation effect. In addition, our experiments reveal that copper contamination alone can cause the light induced minority-carrier lifetime degradation.

No abstract available

No abstract available

[en] A brand new and feasible method for measuring the carrier lifetime and capture cross-section of a barrier by using the negative resistance segment of the I-V characteristics of a barrier-type thyristor (BTH) is put forward. The measuring principle and calculation method are given. The BTH samples are experimentally measured and the results are analyzed in detail. (semiconductor devices)

[en] Using a Ge(Li) detector in positron lifetime measurements on KCl single crystals the Doppler broadening of 2γ-annihilation radiation was additionally determined. It is found that the Doppler broadening depends on the positron lifetime. The measurements support the hypothesis that a positronium-like state exists in uncoloured alkali halides

[en] The photoelectromagnetic effect has been studied in insulating case single crystals. A region of light intensity has been found in which the dependence of short-circuit current on the incident light power is linear. From the experimental data, a lifetime of the minority carries tausub(p)=1.1x10^-12 sec, has been deduced

[en] A rigorous treatment of the nonlinear behavior of photocarrier radiometric (PCR) signals is presented theoretically and experimentally for the quantitative characterization of semiconductor photocarrier recombination and transport properties. A frequency-domain model based on the carrier rate equation and the classical carrier radiative recombination theory was developed. The derived concise expression reveals different functionalities of the PCR amplitude and phase channels: the phase bears direct quantitative correlation with the carrier effective lifetime, while the amplitude versus the estimated photocarrier density dependence can be used to extract the equilibrium majority carrier density and thus, resistivity. An experimental ‘ripple’ optical excitation mode (small modulation depth compared to the dc level) was introduced to bypass the complicated ‘modulated lifetime’ problem so as to simplify theoretical interpretation and guarantee measurement self-consistency and reliability. Two Si wafers with known resistivity values were tested to validate the method. (letter)