[en] Optical modulation response is used to study the influence of radiative, Shockley-Read-Hall, and Auger recombination processes on the minority carrier lifetime in a mid-wave infrared InAs/InAsSb superlattice. A comparison of calculated and measured temperature dependencies shows that the lifetime is influenced mainly by radiative recombination at low temperatures, resulting in an increase of the minority carrier lifetime from 1.8 μs at 77 K to 2.8 μs at 200 K. At temperatures above 200 K, Auger recombination increases rapidly and limits the lifetime. Shockley-Read-Hall limited lifetimes on the order of 10 μs are predicted for superlattices with lower background doping concentration

[en] Time-resolved band-to-band photoluminescence offers a quick and contactless technique for determining the photoexcited free carrier lifetime in GaAs samples with deep traps

[en] A Si waveguide integrated with a lateral p–i–n diode forms a popular optical amplitude and a phase modulator. Three experimental techniques were introduced to measure the effective carrier lifetime in the Si modulator: the static optical absorption method, the reverse recovery method and the transient optical absorption method. A simple theoretical model was established to estimate the effective carrier lifetime in the Si modulator from its geometry

[en] We investigate the impact of copper on the light induced minority-carrier lifetime degradation in various crystalline silicon materials. We demonstrate here that the presence of neither boron nor oxygen is necessary for the degradation effect. In addition, our experiments reveal that copper contamination alone can cause the light induced minority-carrier lifetime degradation.

No abstract available

[en] A brand new and feasible method for measuring the carrier lifetime and capture cross-section of a barrier by using the negative resistance segment of the I-V characteristics of a barrier-type thyristor (BTH) is put forward. The measuring principle and calculation method are given. The BTH samples are experimentally measured and the results are analyzed in detail. (semiconductor devices)

No abstract available

[en] Using a Ge(Li) detector in positron lifetime measurements on KCl single crystals the Doppler broadening of 2γ-annihilation radiation was additionally determined. It is found that the Doppler broadening depends on the positron lifetime. The measurements support the hypothesis that a positronium-like state exists in uncoloured alkali halides

[en] The photoelectromagnetic effect has been studied in insulating case single crystals. A region of light intensity has been found in which the dependence of short-circuit current on the incident light power is linear. From the experimental data, a lifetime of the minority carries tausub(p)=1.1x10^-12 sec, has been deduced

[en] A specially designed lifetime measurement instrument has been developed to characterize silicon ingots before they are subjected to expensive slicing and solar-cell processing, thereby saving needless processing costs of inferior materials in a solar-cell production line. The instrument uses the direct-current photoconductance decay (DC-PCD) method for linear detection of the transient photoconductance signal and localized probing / illumination for necessary sensitivity on low resistivity and large samples. The instrument also has a compact and high-power laser diode as the light source, data averaging capability, a pneumatic ingot transport and probe positioning mechanism, and a user-friendly graphical interface for data acquisition / lifetime calculation / data storage / hardcopy for factory-floor use with quick turnaround. A 3-dimensional finite-element analysis indicates that the as-cut surface finish is adequate for measuring the bulk lifetime on the order of 50 ms or less. Measurement repeatability and clear distinction among different grades of feedstock materials have been demonstrated