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Brissot, J.-J.; Delin, Christian; Ortega, Francis; Tranchart, J.-C.
Laboratoires d'Electronique et de Physique Appliquee (LEP), 75 - Paris (France)1976
Laboratoires d'Electronique et de Physique Appliquee (LEP), 75 - Paris (France)1976
AbstractAbstract
[en] The aim of the invention is to suggest a process for treating cadmium telluride material so as to increase its resistivity and make radiation detectors by depositing on the material so treated a metallic contact, by any metal. The special characteristic of this process is the volume doped with a halogenide selected in the group formed by TeCl4, TeBr4 and TeI4 and that, after cutting up, the samples are sensitized on at least a part of their surface by means of a chemical bath containing potassium cyanide, silver cyanide and ammonia, so as to create a thin film of tellurium having an appreciable conductivity
[fr]
L'invention a pour but de proposer un procede de traitement du materiau de tellurure de cadmium, de maniere a elever sa resistivite, et de realiser des detecteurs de rayonnement en deposant sur le materiau ainsi traite, un contact metallique, par un metal quelconque. Ce procede se caracterise particulierement en ce qui concerne le materiau de CdTe dope en volume par un halogenure choisi dans le groupe constitue par TeCl4, TeBr4 et TeI4 et, qu'apres decoupe, les echantillons sont sensibilises au moins sur une partie de leur surface par un bain chimique contenant du cyanure de potassium, du cyanure d'argent et de l'ammoniaque, de maniere a creer une mince couche sensiblement conductrice de tellureOriginal Title
Procede de realisation de detecteurs semi-conducteurs et detecteurs ainsi obtenus
Source
1 Jul 1976; 10 p; FR PATENT DOCUMENT 2356454/A/; Available from Institut National de la Propriete Industrielle, Paris (France)
Record Type
Patent
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Siffert, Paul; Cornet, Alain; Regal, Raymond; Marfaing, Yves; Triboulet, Robert.
Delegation Ministerielle pour l'Armement, 75 - Paris (France). Bureau des Brevets et Inventions1975
Delegation Ministerielle pour l'Armement, 75 - Paris (France). Bureau des Brevets et Inventions1975
AbstractAbstract
[en] This addendum refers to miniature nuclear detectors which can work on low voltages and can record with great efficiency and simultaneously alpha, beta and gamma rays as well as slow or fast thermal neutrons. The invention concerns a process for treating cadmium telluride crystals (CdTe) used in such detectors in order to suppress polarisation phenomena. The surface of the material is first heated mechanically by fine grinding or polishing, after which the surface is treated chemically and finally a thin insulating coat topped with at least one coat of a good conducting material is applied. This produces a final structure of the good conducting-insulating-semi-conducting metal or material type
[fr]
Cet addendum se rapporte aux detecteurs nucleaires miniatures qui fonctionnent sous de faibles tensions et sont capables d'enregistrer avec une grande efficacite et simultanement les rayonnements alpha, beta, gamma ainsi que les neutrons thermiques lents ou rapides. L'invention a pour objet de fournir un procede de traitement des cristaux de tellurure de cadmium (CdTe) utilises dans de tels detecteurs, de maniere a supprimer les phenomenes de polarisation. Dans une premiere etape la surface du materiau est traitee mecaniquement par rodage ou polissage fin, dans une deuxieme etape, la surface du materiau est traitee chimiquement, et dans une troisieme etape, il est constitue a la surface du materiau une mince couche isolante surmontee d'au moins une couche d'un materiau bon conducteur. Il est ainsi realise une structure finale du type MIS (metal ou materiau bon conducteur-isolant-semiconducteur)Original Title
Detecteur nucleaire
Source
2 Jul 1975; 7 p; FR PATENT DOCUMENT 2316746/E/; Available from Institut National de la Propriete Industrielle, Paris (France); Addition to the French patent document 7429469.
Record Type
Patent
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Vartsky, D.; Shamai, Y.; Duchan, R.; Klopfer, Y.; Goldberg, M.
Annual meeting 1985, 6-7 february 19851985
Annual meeting 1985, 6-7 february 19851985
AbstractAbstract
No abstract available
Source
Israel Nuclear Society, Yavne; Israel Health Physics Society; Radiation Research Society of Israel; Israel Society of Medical Physics; Transactions; v. 12; 206 p; 1985; p. 199-200; Nuclear Societies of Israel annual meeting; Beer-Sheva (Israel); 6-7 Feb 1985; Published in summary form only.
Record Type
Miscellaneous
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Conference
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AbstractAbstract
[en] Portable device for measuring ionizing radiations which includes, a detector, amplifying facilities, electronic compensation facilities, and a visual display for showing the radiation dose received by the detector, as well as facilities for calculating the radiation dose received during a period of time, called integration time, which is shown on the visual display
[fr]
Dispositif portatif de mesure de rayonnements ionisants qui comprend un detecteur, des moyens d'amplification, des moyens electroniques de compensation et des moyens d'affichage de la dose de rayonnement recue par le detecteur, ainsi que des moyens de calcul de la dose de rayonnement recue pendant une periode de temps, dite d'integration, qui est affichee par lesdits moyens d'affichageOriginal Title
Dispositif portatif de mesure de rayonnements ionisants utilisant un detecteur a semi-conducteur et a compensation electronique
Source
30 Apr 1982; 17 p; FR PATENT DOCUMENT 2492989/A/; Available from Institut National de la Propriete Industrielle, Paris (France)
Record Type
Patent
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Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
AbstractAbstract
No abstract available
Primary Subject
Source
77. Annual meeting with ordinary general meeting of the DPG and 2013 Spring meeting with the divisions hadrons and nuclei, particle physics, the working teams equal opportunities, energy, the working groups information, young DPG, philosophy of the physics, physics and disarmament; 77. Jahrestagung der DPG mit Ordentlicher Mitgliederversammlung und DPG-Fruehjahrstagung 2013 mit den Fachverbaenden Physik der Hadronen und Kerne, Teilchenphysik den Arbeitskreisen Chancengleichheit, Energie den Arbeitsgruppen Information, junge DPG, Physik und Abruestung; Dresden (Germany); 4-8 Mar 2013; Available from http://www.dpg-verhandlungen.de; Session: HK 38.9 Di 16:00; Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 48(2)
Record Type
Journal Article
Literature Type
Conference
Journal
Verhandlungen der Deutschen Physikalischen Gesellschaft; ISSN 0420-0195;
; CODEN VDPEAZ; (Dresden 2013 issue); [1 p.]

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External URLExternal URL
AbstractAbstract
[en] The use of a portable scanner to measure loss of bone mineral during periods of prolonged bedrest or weightlessness is described. The unit employs CdTe detectors to measure the transmission of a collimated beam of 27.5keV X-rays from I-125 which is located opposite the collimated detector. It is demonstrated that in this way, very precise measurements of bone mineral content can be made, using a battery operated portable miniature instrument
Source
2. International symposium on cadmium telluride: physical properties and applications; Strasbourg, France; 29 Jun - 2 Jul 1976
Record Type
Journal Article
Literature Type
Conference
Journal
Revue de Physique Appliquee; v. 12(2); p. 375-378
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue
Carrel, F.; Schoepff, V.; Adeline, Q.; Amoyal, G.; Imbault, M.; Abou Khalil, R.; Bouzac, Q.; Mekhalfa, Z.; Tondut, L.; Faussier, G., E-mail: vincent.schoepff@cea.fr
Societe Francaise d'Energie Nucleaire - SFEN, 103 rue Reaumur, 75002 Paris (France)2018
Societe Francaise d'Energie Nucleaire - SFEN, 103 rue Reaumur, 75002 Paris (France)2018
AbstractAbstract
[en] Localization of radioactive hot spots is a crucial issue for nuclear industry and a challenging topic for the research-development community. Gamma cameras are systems of great interest for this type of applications. In this article, we present the main steps related to the development of an ultra-compact version of the GAMPIX technology, called Nanopix. The Nanopix prototype is based on 3 main building blocks. The first one is the Timepix pixelated chip (256 pixels * 256 pixels, 1 mm CdTe substrate) which enables a direct conversion from gamma-ray to electrical signal. The second one is a MURA coded aperture, which drastically improves the sensitivity in comparison with a pinhole collimator. The last one is a USB interface enabling to obtain a fast and easy deployment of the gamma camera. Nanopix global weight is only 268 g making this system the lightest gamma camera in the world at the current time. We will also illustrate experimental performances obtained in laboratory conditions and during in-situ measurements. Future evolutions of this gamma camera will be finally exposed. (authors)
Primary Subject
Source
2018; 2 p; DEM 2018: International conference on dismantling challenges: industrial reality, prospects and feedback experience; Avignon (France); 22-24 Oct 2018; 4 refs.; Available from the INIS Liaison Officer for France, see the INIS website for current contact and E-mail addresses
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Miscellaneous
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Conference
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AbstractAbstract
[en] A collaboration agreement has been signed between CEA and Saint-Gobain to study the feasibility of CdZnTe semiconductor to be used in gamma cameras involved in medical imaging. The aim is a reduction of the camera size by replacing the standard scintillators and photomultiplier tubes by a matrix of semiconductor detectors. (A.C.)
Original Title
Medecine nucleaire, accord CEA-Saint Gobain autour des detecteurs CdZnTe
Secondary Subject
Record Type
Journal Article
Journal
CEA Technologies (Gif-sur-Yvette); ISSN 1166-7648;
; (no.42); p. 7

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AbstractAbstract
No abstract available
Source
20. nuclear science symposium and 5. nuclear power systems symposium; San Francisco, CA; 14 Nov 1973
Record Type
Journal Article
Literature Type
Conference
Journal
IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci; v. NS-21(1); p. 404-407
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AbstractAbstract
No abstract available
Source
American Nuclear Society 1975 winter meeting; San Francisco, CA, USA; 16 Nov 1975; Published in Summary Form Only.
Record Type
Journal Article
Literature Type
Conference
Journal
Transactions of the American Nuclear Society; v. 22 p. 123-124
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