Results 1 - 10 of 2563
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[en] The worst case bias during total dose irradiation of partially depleted SOI transistors (from SNL and from CEA/LETI) is correlated to the device architecture. Experiments and simulations are used to analyze SOI back transistor threshold voltage shift and charge trapping in the buried oxide
[en] In this paper a thermic method for electret production is described. Electrets were used for radon daughters collection. The factor of electrostatic al collection of positively charged daughters was determined experimentally. 214 Bi is collected more efficiency than 218 Po, for one order of magnitude. The reason for so large collection efficiency is short half life of 218 Po in comparing with 214 Bi. (author)
[en] A new AFE is being developed for the new LANSCE-R wire-scanner systems. The new AFE is implemented in a National Instruments Compact RIO (cRIO) module installed a BiRa 4U BiRIO cRIO chassis specifically designed to accommodate the cRIO crate and all the wire-scanner interface, control and motor-drive electronics. A single AFE module provides interface to both X and Y wire sensors using true DC coupled transimpedance amplifiers providing collection of the wire charge signals, real-time wire integrity verification using the normal dataacquisition system, and wire bias of 0V to +/-50V. The AFE system is designed to accommodate comparatively long macropulses (>1ms) with high PRF (>120Hz) without the need to provide timing signals. The basic AFE bandwidth is flat from true DC to 50kHz with a true first-order pole at 50kHz. Numeric integration in the cRIO FPGA provides real-time pulse-to-pulse numeric integration of the AFE signal to compute the total charge collected in each macropulse. This method of charge collection eliminates the need to provide synchronization signals to the wire-scanner AFE while providing the capability to accurately record the charge from long macropulses at high PRF.
[en] The space charge region surrounding a highly charged, electron collecting, spacecraft moving in the ionospheric plasma, can be divided into an inner zone (close to the spacecraft), where electron collection is isotropic with respect to the magnetic-field direction, and an outer zone where the electrons are mainly collected along magnetic field lines. In this paper the authors outline a theory to obtain the current voltage characteristic of such a positive satellite. It is shown that the theoretical results compare very favorably with the experimental data obtained by the TSS-1R mission
[en] Floating body effects can undermine the soft-error tolerance of partially-depleted SOI technologies [1, 2]. Body ties are used to mitigate floating body effects [3,4]. In this paper, we study the charge collection properties and effectiveness of different body tie designs for reducing soft errors induced by energetic particle strikes
[en] The corona stabilization system of an EN Tandem Van de Graaff accelerator is studied in order to reduce the fast fluctuations. With the measured parameters of the corona triode, i.e. μ, Rsub(i) and the transit time, an electrical replacement diagram is given. From this diagram a stabilizing factor S can be calculated. A comparison between the theoretical and experimental values for S shows a good agreement
[en] This paper reports on a SOI detector with drift field induced by the flow of majority carriers. It is proposed as an alternative method of detector biasing compared to standard depletion. N-drift rings in n-substrate are used at the front side of the detector to provide charge collecting field in depth as well as to improve the lateral charge collection. The concept was verified on a 2.5 x 2.5 mm2 large detector array with 20 (micro)m and 40 (micro)m pixel pitch fabricated in August 2009 using the OKI semiconductor process. First results, obtained with a radioactive source to demonstrate spatial resolution and spectroscopic performance of the detector for the two different pixel sizes will be shown and compared to results obtained with a standard depletion scheme. Two different diode designs, one using a standard p-implantation and one surrounded by an additional BPW implant will be compared as well.
[en] A new and complete theoretical formulation was implemented for resistive silicon strip detectors, taking into account the effects of detector time constant, finite impedance of the preamplifier and the charge equalization effect. The theoretical calculation agrees very well with the model simulation and experimental tests. Although the “ballistic deficit” effect is small for a strip detector, it is demonstrated that the charge equalization effect should be treated carefully. The present work provides a quantitative base to optimize the design of the resistive strip detector, the preamplifier and the amplifier in a consistent way.
[en] This paper presents a new approach to analyzing semiconductor radiation detectors based on considering: (1) static charge when all free charge has been collected and (2) capacitances between electrodes and trapped charge within the crystal. It avoids any direct consideration of free charge motion in the detector. The validity of this static charge approach is established by using it to derive the Hecht equation. Its general usefulness is demonstrated by employing it to examine detectors with well-known alternative electrode geometries and obtaining useful new insight into their operating mechanisms. This new approach should provide a useful and intuitive visualization tool to aid in designing new detector configurations and establishing models for analysis of detectors with more complex geometries