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AbstractAbstract
[en] The smaller size and higher integration of advanced electronic package systems result in severe electrochemical reliability issues in microelectronic packaging due to higher electric field under high temperature and humidity conditions. Under these harsh conditions, electronic components respond to applied voltages by electrochemical ionization of metal and the formation of a filament, which leads to short-circuit failure of an electronic component, which is termed electrochemical migration. This work aims to evaluate electrochemical migration susceptibility of the pure Sn, Sn-3.5Ag, Sn-3.0Ag-0.5Cu solder alloys in Na2SO4. The water drop test was performed to understand the failure mechanism in a pad patterned solder alloy. The polarization test and anodic dissolution test were performed, and ionic species and concentration were analyzed. Ag and Cu additions increased the time to failure of Pb-free solder in 0.001 wt% Na2SO4 solution at room temperature and the dendrite was mainly composed of Sn regardless of the solders. In the case of SnAg solders, when Ag and Cu added to the solders, Ag and Cu improved the passivation behavior and pitting corrosion resistance and formed inert intermetallic compounds and thus the dissolution of Ag and Cu was suppressed: only Sn was dissolved. If ionic species is mainly Sn ion, dissolution content than cathodic deposition efficiency will affect the composition of the dendrite. Therefore, Ag and Cu additions improve the electrochemical migration resistance of SnAg and SnAgCu solders
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Source
14 refs, 6 figs
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Journal Article
Journal
Corrosion Science and Technology; ISSN 1598-6462;
; v. 6(2); p. 50-55

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Wang Xiaohui; Ren Tianling; Li Longtu; Gui Zhilun; Su Shuiyuan; Yue Zhenxing; Zhou Ji, E-mail: wxh@tsinghua.edu.cn2001
AbstractAbstract
[en] Co2Z hexaferrite is a planar anisotropic iron oxide which can present high values of permeability at high frequency. In this paper, Cu-modified Co2Z hexaferrites powders were synthesized at a low temperature using a citrate precursor method. The formation of Z-type phases was characterized by X-ray diffraction and magnetization measurements. It is found that phase formation temperature and sintering temperature were influenced directly by the content of copper. The effects of Cu-substitution on the microstructure and high frequency properties of the ceramics have been investigated
Primary Subject
Source
S0304885301003766; Copyright (c) 2001 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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AbstractAbstract
[en] The microstructural and photoconductive properties of single crystals of cadmium selenide alloyed with copper are studied. The microstructural analysis technique was used to examine the diffusion profile of the alloyed layer, and microhardness measurements were made to determine the distribution of copper along the diffusion profile. At the same time, the photocurrent spectra, dark resistance and the ratio of dark to light resistance were studied layer by layer. The results indicate that, in the region of homogeneity of the CdSe:Cu system, there is an unambiguous correlation between the spectral content of the photocurrent and resistance of the alloyed layers, on the one hand, and the pattern of copper distribution, on the other
Original Title
Kharakter raspredeleniya medi i fotoehlektricheskikh svojstv v legirovannykh pripoverkhnostnykh sloyakh monokristallov selenida kadmiya
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Secondary Subject
Source
5 refs.; for English translation see the journal J. Appl. Spectrosc.
Record Type
Journal Article
Journal
Zhurnal Prikladnoj Spektroskopii; v. 26(6); p. 1082-1084
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AbstractAbstract
No abstract available
Source
1. Brazilian School on Semiconductor Physics; Campinas, SP (Brazil); 31 Jan - 11 Feb 1983; Published in summary form only.
Record Type
Journal Article
Literature Type
Conference
Journal
Revista Brasileira de Fisica; ISSN 0374-4922;
; (v. especial); p. 434

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AbstractAbstract
[en] Ion implantation and ion backscattering analysis have been used to measure the solubility of copper in beryllium over the temperature range 593 to 1023 K, and to determine the effect on the copper solubility of aluminum and silicon impurities. The binary data extend 280 K lower in temperature than previous results, while the ternary measurements are unique. The information is pertinent to the use of copper for solution strengthening of beryllium. Diffusion couples were formed by ion implantation of copper into single-crystal beryllium at room temperature, followed where appropriate by implantation of aluminum or silicon. The samples were then annealed isothermally, and the time-evolution of the composition-vs-depth profile, determined by ion backscattering analysis, yielded the solubility of copper. Measurements at exceptionally low temperatures were facilitated by the short diffusion distances, approximately equal to 0.1 mu m, and the use of neon irradiation to accelerate diffusion. The resulting binary data for the solubility C0 of copper in beryllium merge smoothly into previous results at higher temperatures. The combined data, covering the temperature range 593 to 1373 K, are well described by C0 = (12.6 at. pct) . exp (-842 K/T). In the ternary regime, the effects of aluminum and silicon on the solubility of copper were found to be small
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Secondary Subject
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Journal Article
Journal
Metall. Trans., A; v. 8(4); p. 609-616
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Zanghi, J.-P.
CEA Centre d'Etudes Nucleaires de Fontenay-aux-Roses, 92 (France). Dept. d'Etudes des Combustibles a Base de Plutonium; Paris-11 Univ., 91 - Orsay (France)1975
CEA Centre d'Etudes Nucleaires de Fontenay-aux-Roses, 92 (France). Dept. d'Etudes des Combustibles a Base de Plutonium; Paris-11 Univ., 91 - Orsay (France)1975
AbstractAbstract
[en] The initial rates of contraction due to self-irradiation damage at 4.2K in three PuSc alloys (5, 12, 18 at % Sc) stabilized in f.c.c. delta-phase were measured. The high negative value of the formation volume of a Frenkel pair which is deduced by extrapolating for pure Pu, can only be explained by assuming that the interstitial Pu may partly recover its distortion energy by creating bonds with its neighbours, by a localized enhancement of the d.f. hybridization and especially by provoking the formation of bonds between its very neighbours. It is shown that about twenty atoms around the interstitial Pu are affected by these bonds. The self-irradiation at 4.2K of a b.c.c. UPuMo alloy was also studied. The activation volume for self-diffusion of Pu in b.c.c. PuZr alloys (10 and 40 at % Zr) was determined. So the validity of Nachtrieb's melting-diffusion correlation could be checked. Indeed, in the Pu 40 at % Zr alloy, which has a pressure temperature diagram the liquidus of which has a positive slope, a positive activation volume was found, whereas in pure epsilon Pu which as a negative slope, the activation volume is negative. A self-diffusion mechanism in PuZr alloys is proposed. A study of the diffusion of Am in these alloys showed that Am and Pu likely diffuse by the same mechanism
[fr]
On a mesure les vitesses initiales de contraction de trois alliages PuSc (5, 12, 18 at% de Sc) stabilises en phase delta cubique a faces centrees, par autoirradiation a 4,2K. La valeur negative, tres elevee en valeur absolue, du volume de formation d'une paire de Frenkel qui en est deduit par extrapolation pour le Pu delta pur, ne peut s'expliquer qu'en supposant que l'atome de Pu qui passe en position interstitielle peut recuperer une partie de l'energie de distorsion qu'il communique au reseau, en formant des liaisons avec les atomes voisins du site interstitiel, par un renforcement local de l'hybridation d-f et surtout en provoquant la creation de liaisons entre ces memes voisins. On montre qu'une vingtaine d'atomes autour de l'interstitiel sont concernes par ces liaisons. L'autoirradiation a 4,2K d'un alliage UPuMo stabilise en phase cubique centree a ete egalement etudiee. On a aussi determine le volume d'activation d'autodiffusion de Pu dans les alliages PuZr (10 et 40 at % de Zr) en phase cubique centree. Nous avons pu ainsi verifier la validite de la correlation fusion-diffusion de Nachtrieb. En effet, dans le cas de l'alliage a 40 at %, on a trouve un volume d'activation positif, correspondant a une pente positive du solidus du diagramme p.T. de l'alliage, alors que dans le cas du Pu epsilon pur qui a une pente negative, le volume d'activation est negatif. Un mecanisme d'autodiffusion dans les alliages PuZr est propose. Une etude de l'heterodiffusion de l'Am dans ces memes alliages a montre que l'Am diffuse vraisemblablement par le meme mecanisme que le PuOriginal Title
Contribution a l'etude des anomalies de diffusion dans les metaux cubiques centres et cubiques a faces centrees
Primary Subject
Source
Oct 1975; 213 p; These (D. es S.).
Record Type
Report
Literature Type
Thesis/Dissertation
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Wiesner, H.J.
California Univ., Livermore (USA). Lawrence Livermore Lab1978
California Univ., Livermore (USA). Lawrence Livermore Lab1978
AbstractAbstract
[en] In certain high-current applications the resistance of the aluminum conductors is an important design parameter. Such a case is the aluminum exploding-bridge used in some nuclear detonators. The resistance of the network must be accurately known so that the individual bridge will receive the proper firing current. Vapor-deposited, thick aluminum films (0.011 mm) are often used to produce the necessary circuitry. These films are suitably masked and etched to make the conductors. Conventional etching methods for aluminum or aluminum-0.1 wt percent copper do not yield conductors with a well-defined, reproducible cross section. This results in unacceptable variations in electrical resistance. For this application, we have developed a new etching solution that contains 25 to 50 vol percent polyphosphoric acid, 75 to 50 vol percent orthophosphoric acid, and 10 to 30 g/l ferric chloride. Etching may be done at 55 to 650C, but for precision etching the temperature should be controlled to +-10C. The solution is useful for dip etching of aluminum circuits. The paper describes some limited production experience with this etch
Primary Subject
Source
15 Feb 1978; 24 p; 65. conference of American Electroplaters' Society; Washington, DC, USA; Jun 1978; CONF-780602--3; Available from NTIS., PC A02/MF A01
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Report
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Conference
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AbstractAbstract
No abstract available
Primary Subject
Source
AC02-98CH10886; Available from Brookhaven National Lab., Upton, NY (US)
Record Type
Journal Article
Journal
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Chinaglia, Eliane de F.; Nascimento, Marcio L.F.; Trippe, Simone C.; Matsuoka, Masao; Watanabe, Shigueo
Associacao Brasileira de Metalurgia e Materiais, Sao Paulo, SP (Brazil)1994
Associacao Brasileira de Metalurgia e Materiais, Sao Paulo, SP (Brazil)1994
AbstractAbstract
[en] Alkaline borate glasses with technological interest were investigated and its characterization in the borate glasses doped with copper were carried out. Optical absorption, thermoluminescence and electron spin resonance techniques have been used, particularly to mechanism of thermoluminescence based on optical absorption and ESR data. (author)
Source
1994; 4 p; 11. Brazilian congress of engineering and materials science; 11. Congresso brasileiro de engenharia e ciencia dos materiais; Aguas de Sao Pedro, SP (Brazil); 1994; 6 refs., 11 figs.
Record Type
Miscellaneous
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Conference
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Sen'kovskij, B.V.; Usachev, D.Yu.; Chikina, A.G.; Adamchuk, V.K.; Shelyakov, A.V.
Scientific session of NRNU MEPHI-2013. Abstracts. In three volumes. Volume 2. Problems of fundamental science. Strategic information technologies2013
Scientific session of NRNU MEPHI-2013. Abstracts. In three volumes. Volume 2. Problems of fundamental science. Strategic information technologies2013
AbstractAbstract
No abstract available
Original Title
Ehlektronnaya ehnergeticheskaya struktura splavov Ti-Ni i TiNi-Cu
Primary Subject
Source
Ministerstvo Obrazovaniya i Nauki Rossijskoj Federatsii, Moscow (Russian Federation); Gosudarstvennaya Korporatsiya po Atomnoj Ehnergii Rosatom, Moscow (Russian Federation); Natsional'nyj Issledovatel'skij Yadernyj Univ. MIFI, Moscow (Russian Federation); 364 p; ISBN 978-5-7262-1787-1;
; 2013; p. 80; Scientific session of NRNU MEPHI-2013; Nauchnaya sessiya NIYaU MIFI-2013; Moscow (Russian Federation); 2013

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