[en] Model of thermodynamically non-equilibrium points defects accumulation in solids is described. In solid's volume unit during time unit the K Frenkel pairs have been generated. The pairs consist from both the vacancies (V) and the interstitial atoms (IA). V and IA inter-recombination, and its either diffuse on gutters or have being captured by mixture atoms and form complexes. Complexes can ether decay under thermal factor or joint new V and IA transforming into gutters in forms of dislocation loops and pores. Vacancies can join in bi-vacancies. It is concluded that metals irradiation at temperatures when IA become mobile and gutters exist IA conducts to vacancies accumulation in metals. At that dynamically equilibrium concentration of V does not establish. V concentration during irradiation increases nearly linearly except small initial period. Under high rated of absorption of IA by gutters the effect similar to gutters heating is observed conducting to instability of gutters

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[en] We demonstrate a novel method of introducing point defects (mono- and divacancies) in a confined monolayer colloidal crystal by manipulating individual particles with optical tweezers. Digital video microscopy is used to study defect dynamics in real space and time. We verify the numerical predictions that the stable configurations of the defects have reduced symmetry compared to the triangular lattice and discover that in addition they are characterized by distinct topological arrangements of the particles in the defect core. Surprisingly, point defects are thermally excited into separated dislocations, from which we extract the dislocation pair potential

[en] Based on the plane-wave expansion method, the effects of point defect shapes on defect modes of spin waves in two-dimensional magnonic crystals are numerically investigated. The considered point defect bodies include square defect, circular defect and rectangular defect. For both cases of square defect or circular defect, the defect modes vary obviously as the shape of the defect body only for a bigger defect filling fraction. However, for the case of rectangular defect, the defect modes show a dependence on its shape even if the defect filling fraction is smaller, and the double degeneration of rectangular defect mode will split into two nondegenerate modes when the ratio of edge widths of the rectangular defect reaches a certain value. Besides, whether square defect or rectangular defect, the defect modes change with the orientation of the point defect localizing in the cell only for a bigger defect filling fraction. Such an approach of changing shape of point body may open up a new scope for engineering defect modes and band gaps of spin waves in two-dimensional magnonic crystals. - Highlights: • We introduce three kinds of point defects into two-dimensional magnonic crystals. • The effects of different-shaped defects on defect modes are studied. • The modes vary as shape of square or circular defect only for big filling fraction. • The modes are dependent of the shape of rectangular defect. • The double degenerate mode will split in a certain condition for rectangular defect

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[en] Theoretical analysis of defect formation in boron nitride according to the Schottky, Frenkel and anti-Frenkel mechanisms in the framework of quasichemical approximation method has been performed. Dependences of defect concentrations on partial pressure of nitrogen under equilibrium conditions have been obtained. On the basis of the data analysis of regularities of oxidizing, nitridation and other processes occurring when items of boron nitride are used in diverse oxygen- and nitrogen-containing gas media has been made. 64 refs.; 1 fig.; 6 tabs

[en] The article is devoted to the current problem of enterprise competitiveness rise in hard and competitive terms of business environment. The importance of modern equipment for detection of defects and their correction is explained. Production of chipboard is used as an object of research. Short description and main results of estimation efficiency of innovative solutions of enterprises are considered. (paper)

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[en] This report describes the work performed by the University of Illinois at Urbana-Champaign. The following results were obtained under the work funded by this subcontract: (1) Point defects and electronic properties of Cu(In(sub 1-x)Ga(sub x))Se(sub 2): New record results for hole mobilities in Cu(In(sub 1-x)Ga(sub x))Se(sub 2) based on single crystals grown by Rockett's group; Demonstrated the role of Ga in determining hole concentrations; Showed that Ga does not affect the hole mobility in this material and why this is the case; Determined the diffusion coefficient for Ga in single-crystal Cu(In(sub 1-x)Ga(sub x))Se(sub 2); Demonstrated the structure and optoelectronic properties of the CuIn(sub 3)Se(sub 5) ordered-defect phase of CuInSe(sub 2); Characterized the detailed effects of Na on Cu(In(sub 1-x)Ga(sub x))Se(sub 2) solar cells and on the fundamental properties of the material itself (reduces compensating donors in p-type materials); and In collaboration with groups at the Universities of Salford and Liverpool in the United Kingdom, studied the effect of ion implantation damage on Cu(In(sub 1-x)Ga(sub x))Se(sub 2) single-crystals. (2) Materials for and characterization of devices: Developed a novel contact metallurgy that improves adhesion to the underlying Mo back-contact in solar cells made with Cu(In(sub 1-x)Ga(sub x))Se(sub 2); (This material has also yielded substantial novel materials science behaviors, including grain rotation and growth prior to phase separation in a metastable binary alloy.) Characterized the electroluminescence as a function of temperature and Ga content in Cu(In(sub 1-x)Ga(sub x))Se(sub 2) solar cells and showed that the radiative recombination pathways are not band-to-band as in normal semiconductors, but rather, proceed through defect states; and Working with a group at the University of Uppsala in Sweden, demonstrated novel aspects of the bonding and chemistry of dip-coated CdS heterojunction materials used as heterojunction partner materials in Cu(In(sub 1-x)Ga(sub x))Se(sub 2) solar cells

[en] This paper summarises methods used and results obtained in calculations on point defect processes in UO₂. Enthalpies and entropies are calculated for basic defect formation, ion migration and charge transfer. (author)