No abstract available

[en] The work shows a measurement technique to obtain the correct value of the four elements in a resistive Wheatstone bridge without the need to separate the physical connections existing between them. Two electronic solutions are presented, based on a source-and-measure unit and using discrete electronic components. The proposed technique brings the possibility to know the mismatching or the tolerance between the bridge resistive elements and then to pass or reject it in terms of its related common-mode rejection. Experimental results were taken in various Wheatstone resistive bridges (discrete and magnetoresistive integrated bridges) validating the proposed measurement technique specially when the bridge is micro-fabricated and there is no physical way to separate one resistive element from the others

No abstract available

[en] Rigid circuits were dominating electronic industries in the past tens of years. Recently, the creation of stretchable conductors opens a new era to electrical materials science and technology. Stretchable conductors, which are different from flexible conductors, can maintain electrical conductivity when they are not only bent but also stretched. folded or twisted. Because of this characteristic of stretchable conductors, a new class of applications which would be impossible to achieve by traditional rigid conductors will be opened up. These potential applications include flexible displays, stretchable interconnectors, electronic artificial skins, stretchable electronic implants, and health assistant. The creation of stretchable conductors changes our conventional conception of conductors, from rigid and brittle to soft and stretchable. As indispensable components in numerous emerging technologies, stretchable conductors have to overcome a critical challenge that is the simultaneous incorporation of high conductivity and stretchability. Usually, intrinsically conducting materials, such as metals and conducting polymers have excellent electronic performance, but their stretchability is poor. On the other hand, many soft elastomers exhibit good elasticity but inferior conductivity. Overall, stretchable conductors possessing both properties of conductors and elastomers can achieve excellent performance which cannot be obtained by traditional electronics.

[en] The synthesis, structure and properties of tetrathiapentalene-based (TTP) organic conductors are reviewed. Among various TTP-type donors, bis-fused tetrathiafulvalene, 2,5-bis(1,3-dithiol-2-ylidene)-1,3,4,6-tetrathiapentalene (BDT-TTP) and its derivatives afford many metallic radical cation salts stable down to low temperatures, regardless of the size and shape of the counter anions. Most BDT-TTP conductors have a β-type donor arrangement with almost uniform stacks. Introduction of appropriate substituents results in molecular packing that differs from the β-type. A vinylogous TTP, 2-(1,3-dithiol-2-ylidene)-5-(2-ethanediylidene-1,3-dithiole) -1,3,4,6-tetrathiapentalene (DTEDT) has yielded an organic superconductor (DTEDT)₃Au(CN)₂ as well as metallic radical cation salts, regardless of the counter anions. (Thio)pyran analogs of TTP, namely (T)PDT-TTP and its derivatives produce molecular conductors with novel molecular arrangements. A TTP analog with reduced π-electron system 2,5-bis(1,3-dithian-2-ylidene)-1,3,4,6-tetrathiapentalene (BDA-TTP) has afforded several organic superconductors. Highly conducting molecular metals with unusual oxidation states (+1, +5/3 and neutral) have been developed on the basis of 2,5-bis(1,3-dithiol-2-ylidene)-1,3,4,6-tetrathiapentalene (BDT-TTP) derivatives and analogous metal derivatives M(dt)₂ (M = Ni, Au). (topical review)

[en] Predicting electronic-band structures is a key issue in understanding the properties of materials or in materials design. In this review article, application examples of first-principles calculations, which are not based on adjustable empirical parameters, to study electronic structures of organic conductors are described. (topical review)

[en] The construction improvement of the anodic conductor of electrolyse for aluminium production block of backed anode with anodic holder is attached in the article

[en] The quasi-two-dimensional molecular conductor α-(BEDT-TTF)₂I₃ exhibits anomalous transport phenomena where the temperature dependence of resistivity is weak but the ratio of the Hall coefficient at 10 K to that at room temperature is of the order of 10⁴. These puzzling phenomena were solved by predicting massless Dirac fermions, whose motions are described using the tilted Weyl equation with anisotropic velocity. α-(BEDT-TTF)₂I₃ is a unique material among several materials with Dirac fermions, i.e. graphene, bismuth, and quantum wells such as HgTe, from the view-points of both the structure and electronic states described as follows. α-(BEDT-TTF)₂I₃ has the layered structure with highly two-dimensional massless Dirac fermions. The anisotropic velocity and incommensurate momenta of the contact points, ±k₀, originate from the inequivalency of the BEDT-TTF sites in the unit cell, where ±k₀ moves in the first Brillouin zone with increasing pressure. The massless Dirac fermions exist in the presence of the charge disproportionation and are robust against the increase in pressure. The electron densities on those inequivalent BEDT-TTF sites exhibit anomalous momentum distributions, reflecting the angular dependences of the wave functions around the contact points. Those unique electronic properties affect the spatial oscillations of the electron densities in the vicinity of an impurity. A marked behavior of the Hall coefficient, where the sign of the Hall coefficient reverses sharply but continuously at low temperatures around 5 K, is investigated by treating the interband effects of the magnetic field exactly. It is shown that such behavior is possible by assuming the existence of the extremely small amount of electron doping. The enhancement of the orbital diamagnetism is also expected. The results of the present research shed light on a new aspect of Dirac fermion physics, i.e. the emergence of unique electronic properties owing to the structure of the material. (topical review)

[en] A thermoelectric device exhibiting both structural integrity and decreased stress across the device notwithstanding the application of thermally cycled temperature differentials thereacross includes, electrically interconnected thermoelectric elements and a rigidly affixed substrate. Thermal stress is relieved by using flexible conductors to interconnect the thermoelectric elements, and by the use of a flexile joint to attach a second substrate to the remainder of the device. Complete elimination of the second substrate may also be used to eliminate stress. Presence of the rigidly affixed substrate gives the device sufficient structural integrity to enable it to withstand rugged conditions

[en] In an exemplary embodiment, a flat radiation beam is detected having a common electrode disposed parallel to the beam plane at one side and a common support with a series of individual conductors providing electrodes opposite successive portions of the common electrode and lying in a plane also parallel to the beam plane. The beam may be fan-shaped and the individual electrodes may be aligned with respective ray paths separated by uniform angular increments in the beam plane. The individual conductors and the connection thereof to the exterior of the detector housing may be formed on an insulator which can be folded into a T-shape for leading the supply conductors for alternate individual conductors toward terminals at opposite sides of the chamber