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AbstractAbstract
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Israel Physical Society, Jerusalem; Bull. Isr. Phys. Soc; v. 26; 82 p; 1980; p. 59; Israel Physical Society 1980 annual meeting; Rehovot, Israel; 9 - 10 Apr 1980; ISSN 0374-2687;
; Published in summary form only.

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Miscellaneous
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Zachariasse, J.M.F.
Cambridge Univ. (United Kingdom)1995
Cambridge Univ. (United Kingdom)1995
AbstractAbstract
No abstract available
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1995; 260 p; Available from British Library Document Supply Centre- DSC:D197896; Thesis (Ph.D.)
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AbstractAbstract
[en] SiOCH ULK films with k-value from 2.5 to 2.1 and porosity from 24 to 40% were etched in CHF3, CHF3 + Ar, CF4 and CF4 + Ar plasmas at +15…−120 °C with and without bias being applied. It was shown that the presence of Ar in gas mixture can significantly increase the damage of unetched ultra low-k (ULK) material (at sidewalls) due to the removal of −CH3 groups from the film by VUV photons. It was also shown that etching and damage of the sidewalls by F atoms can be partially prevented by lowering the temperature of the sample. (paper)
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Available from http://dx.doi.org/10.1088/1361-6463/aa92a7; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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AbstractAbstract
[en] This paper is focused on the potential of ion beam lithography for the development, customization and high volume production of sub-0.5-μm devices. (author). 40 refs.; 12 figs
Source
Soncini, G. (Universita La Sapienza, Roma (Italy). Scuola Ingegneria Aerospaziale; Istituto CNR-LAMEL, Bologna (Italy)); Calzolari, P.U. (Bologna Universita (Italy). DEIS-Facolta di Ingegneria) (eds.); 1110 p; ISBN 0 444 70477 9;
; 1988; p. 481-489; North-Holland; Amsterdam (Netherlands); 17. European solid state device research conference; Bologna (Italy); 14-17 Sep 1987

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AbstractAbstract
[en] Silicon superjunction power MOSFETs were fabricated with deep trench etching and epitaxial growth, based on the process platform of the Shanghai Hua Hong NEC Electronics Company Limited. The breakdown voltages of the fabricated superjunction MOSFETs are above 700 V and agree with the simulation. The dynamic characteristics, especially reverse diode characteristics, are equivalent or even superior to foreign counterparts. (semiconductor devices)
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Source
Available from http://dx.doi.org/10.1088/1674-4926/31/8/084002; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Journal of Semiconductors; ISSN 1674-4926;
; v. 31(8); [5 p.]

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Astrova, E V; Fedulova, G V, E-mail: east@mail.ioffe.ru2009
AbstractAbstract
[en] The process of trench formation in photo-electrochemical etching of n-type Si (1 0 0) has been studied as dependent on the normalized etching current density j/jPS and on the line seed period a. Experiments were performed on n-type Si (1 0 0) samples with resistivity ρ = 5 and 15 Ω cm. V-shaped grooves with a period a = 4–13 µm, fabricated on the sample surface, were used as etch seeds. We formulate criteria for macropores merging into trenches and formation of trenches from double-pore rows. The validity of these criteria is confirmed by experimental data. The relationships obtained are based on the tendency of the system to form macropores of a certain diameter d, characteristic of silicon with a given resistivity. We found reasons for the enhanced irregularity of the trench walls and suggest design rules for periodic structures. To obtain a wall array, it is recommended to choose a period that does not differ significantly from the average distance between discrete self-organized macropores, a ≈ ā, and an etching current density within the range πd/4a < j/jPS < 2d/a
Source
S0960-1317(09)12082-X; Available from http://dx.doi.org/10.1088/0960-1317/19/9/095009; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Journal of Micromechanics and Microengineering. Structures, Devices and Systems; ISSN 0960-1317;
; CODEN JMMIEZ; v. 19(9); [11 p.]

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AbstractAbstract
[en] A modified CR-39 microfilter with funnel-shaped pore entrances is produced by using a multi-step etching procedure with NaOH and PEWsub(x) solution (PEWsub(x) = 15g KOH + x g C2H5OH + (85 - x)g H2O) as etching agents. The air throughput through this microfilter is measured and compared with the CR-39 microfilter with cylinder-shaped pores and a commercial microfilter (Nuclepore). The experimental data of both CR-39 microfilters show a good agreement with the theoretical values for the air throughout contrary to the Nuclepore microfilter. Furthermore both CR-39 filters have an extremely plane surfaces and no roughness of the pore walls. (author)
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13. International conference on solid state nuclear track detectors; Rome (Italy); 23-27 Sep 1985
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Journal Article
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Cardile, P; Franzò, G; Priolo, F; Krauss, T F; O'Faolain, L, E-mail: paolo.cardile@ct.infn.it2012
AbstractAbstract
[en] We fabricated p+–p–p+ junctions in order to properly investigate the electrical conduction across a boron implanted silicon-on-insulator (SOI) nanostructured pattern, like photonic crystals and shallow-etched trenches. By analysis of the I–V measurements, we demonstrate that a depletion region is present and it is induced by the dry etching process of reactive ion etching. This depletion region does not depend on the geometry of the dry-etched nanostructure, but on the doping level of the substrate. (paper)
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Secondary Subject
Source
Available from http://dx.doi.org/10.1088/0268-1242/27/4/045016; Country of input: International Atomic Energy Agency (IAEA)
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AbstractAbstract
[en] The basic chemistry and mechanisms involved in plasma-surface interaction, and the etching processes that occur during the bombardment of the surface by ions from the plasma, are described. The plasmas considered are mainly those used for the patterning of microelectronic circuits. Also the processes involved in ion-enhanced chemical etching of surfaces are analyzed. Both RIE (reactive ion enhancement), appropriate to plasma environments, and RIBE (reactive ion beam etching) are described. 71 refs.; 15 figs
Source
Auciello, O. (Toronto Univ., Ontario (Canada). Inst. for Aerospace Studies); Kelly, R. (IBM Watson Research Center, Yorktown Heights, NY (USA)) (eds.); Beam modification of materials; v. 1; 483 p; ISBN 0-444-42365-6;
; 1984; p. 323-359; Elsevier; Amsterdam (Netherlands)

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Book
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[en] A multichannel leak detection system has been developed to detect any chemical leak during the electrochemical etching process. It gives an audible and a visible warning when there is a leak at any part of the system. This greatly helps in isolating the defective sample quickly. It can be removed during operation, while the etching process continues on other samples. The circuit is built from standard integrated circuits and has its own power supply. Provisions have been made to connect this system to the computer for recording date, time and location of the leaky unetched samples. (author)
Source
14. international conference on solid state nuclear track detectors; Lahore (Pakistan); 2-6 Apr 1988
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Journal Article
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