No abstract available

No abstract available

[en] This paper is focused on the potential of ion beam lithography for the development, customization and high volume production of sub-0.5-μm devices. (author). 40 refs.; 12 figs

[en] Silicon superjunction power MOSFETs were fabricated with deep trench etching and epitaxial growth, based on the process platform of the Shanghai Hua Hong NEC Electronics Company Limited. The breakdown voltages of the fabricated superjunction MOSFETs are above 700 V and agree with the simulation. The dynamic characteristics, especially reverse diode characteristics, are equivalent or even superior to foreign counterparts. (semiconductor devices)

[en] A modified CR-39 microfilter with funnel-shaped pore entrances is produced by using a multi-step etching procedure with NaOH and PEWsub(x) solution (PEWsub(x) = 15g KOH + x g C₂H₅OH + (85 - x)g H₂O) as etching agents. The air throughput through this microfilter is measured and compared with the CR-39 microfilter with cylinder-shaped pores and a commercial microfilter (Nuclepore). The experimental data of both CR-39 microfilters show a good agreement with the theoretical values for the air throughout contrary to the Nuclepore microfilter. Furthermore both CR-39 filters have an extremely plane surfaces and no roughness of the pore walls. (author)

[en] We fabricated p⁺–p–p⁺ junctions in order to properly investigate the electrical conduction across a boron implanted silicon-on-insulator (SOI) nanostructured pattern, like photonic crystals and shallow-etched trenches. By analysis of the I–V measurements, we demonstrate that a depletion region is present and it is induced by the dry etching process of reactive ion etching. This depletion region does not depend on the geometry of the dry-etched nanostructure, but on the doping level of the substrate. (paper)

[en] The process of trench formation in photo-electrochemical etching of n-type Si (1 0 0) has been studied as dependent on the normalized etching current density j/j_PS and on the line seed period a. Experiments were performed on n-type Si (1 0 0) samples with resistivity ρ = 5 and 15 Ω cm. V-shaped grooves with a period a = 4–13 µm, fabricated on the sample surface, were used as etch seeds. We formulate criteria for macropores merging into trenches and formation of trenches from double-pore rows. The validity of these criteria is confirmed by experimental data. The relationships obtained are based on the tendency of the system to form macropores of a certain diameter d, characteristic of silicon with a given resistivity. We found reasons for the enhanced irregularity of the trench walls and suggest design rules for periodic structures. To obtain a wall array, it is recommended to choose a period that does not differ significantly from the average distance between discrete self-organized macropores, a ≈ ā, and an etching current density within the range πd/4a < j/j_PS < 2d/a

[en] A multichannel leak detection system has been developed to detect any chemical leak during the electrochemical etching process. It gives an audible and a visible warning when there is a leak at any part of the system. This greatly helps in isolating the defective sample quickly. It can be removed during operation, while the etching process continues on other samples. The circuit is built from standard integrated circuits and has its own power supply. Provisions have been made to connect this system to the computer for recording date, time and location of the leaky unetched samples. (author)

[en] This series of articles has been written with those metallographers and technicians in mind who have to deal with the preparation and microstructural interpretation of ceramics. It is hoped that they will result in the reader gaining a knowledge of these specific materials, and understanding of ceramic microstructures together with the basis for their optimum cermamographic preparation. The first part describes the general techniques and methods used in ceramographic etching. (orig./MM)

[en] A novel model was established to investigate the effects of the initial stencil width on stainless steel wet chemical etching. This model was derived to correlate the etching depth with the initial stencil width, etching time and other parameters. Coefficient of determination (COD) was applied to check the fitting accuracy of the model. The model showed good predictive capability for the initial stencil widths ranging from 50 µm to 500 µm. From the derivations of the model, it was found that the etching rate is controlled by the ratio of the area being etched to the area of the stencil opening. Explanations for the variation of the etching depth versus the initial stencil width were also given through a series of mathematical derivations. The limitation of the model and the corresponding reasons were also discussed. This model can be used to predict the etching depth in practical productions when the etching time and the initial stencil width are given