No abstract available

No abstract available

[en] SiOCH ULK films with k-value from 2.5 to 2.1 and porosity from 24 to 40% were etched in CHF₃, CHF₃  +  Ar, CF₄ and CF₄  +  Ar plasmas at  +15…−120 °C with and without bias being applied. It was shown that the presence of Ar in gas mixture can significantly increase the damage of unetched ultra low-k (ULK) material (at sidewalls) due to the removal of  −CH₃ groups from the film by VUV photons. It was also shown that etching and damage of the sidewalls by F atoms can be partially prevented by lowering the temperature of the sample. (paper)

[en] This paper is focused on the potential of ion beam lithography for the development, customization and high volume production of sub-0.5-μm devices. (author). 40 refs.; 12 figs

[en] Silicon superjunction power MOSFETs were fabricated with deep trench etching and epitaxial growth, based on the process platform of the Shanghai Hua Hong NEC Electronics Company Limited. The breakdown voltages of the fabricated superjunction MOSFETs are above 700 V and agree with the simulation. The dynamic characteristics, especially reverse diode characteristics, are equivalent or even superior to foreign counterparts. (semiconductor devices)

[en] The process of trench formation in photo-electrochemical etching of n-type Si (1 0 0) has been studied as dependent on the normalized etching current density j/j_PS and on the line seed period a. Experiments were performed on n-type Si (1 0 0) samples with resistivity ρ = 5 and 15 Ω cm. V-shaped grooves with a period a = 4–13 µm, fabricated on the sample surface, were used as etch seeds. We formulate criteria for macropores merging into trenches and formation of trenches from double-pore rows. The validity of these criteria is confirmed by experimental data. The relationships obtained are based on the tendency of the system to form macropores of a certain diameter d, characteristic of silicon with a given resistivity. We found reasons for the enhanced irregularity of the trench walls and suggest design rules for periodic structures. To obtain a wall array, it is recommended to choose a period that does not differ significantly from the average distance between discrete self-organized macropores, a ≈ ā, and an etching current density within the range πd/4a < j/j_PS < 2d/a

[en] A modified CR-39 microfilter with funnel-shaped pore entrances is produced by using a multi-step etching procedure with NaOH and PEWsub(x) solution (PEWsub(x) = 15g KOH + x g C₂H₅OH + (85 - x)g H₂O) as etching agents. The air throughput through this microfilter is measured and compared with the CR-39 microfilter with cylinder-shaped pores and a commercial microfilter (Nuclepore). The experimental data of both CR-39 microfilters show a good agreement with the theoretical values for the air throughout contrary to the Nuclepore microfilter. Furthermore both CR-39 filters have an extremely plane surfaces and no roughness of the pore walls. (author)

[en] We fabricated p⁺–p–p⁺ junctions in order to properly investigate the electrical conduction across a boron implanted silicon-on-insulator (SOI) nanostructured pattern, like photonic crystals and shallow-etched trenches. By analysis of the I–V measurements, we demonstrate that a depletion region is present and it is induced by the dry etching process of reactive ion etching. This depletion region does not depend on the geometry of the dry-etched nanostructure, but on the doping level of the substrate. (paper)

[en] The basic chemistry and mechanisms involved in plasma-surface interaction, and the etching processes that occur during the bombardment of the surface by ions from the plasma, are described. The plasmas considered are mainly those used for the patterning of microelectronic circuits. Also the processes involved in ion-enhanced chemical etching of surfaces are analyzed. Both RIE (reactive ion enhancement), appropriate to plasma environments, and RIBE (reactive ion beam etching) are described. 71 refs.; 15 figs

[en] A multichannel leak detection system has been developed to detect any chemical leak during the electrochemical etching process. It gives an audible and a visible warning when there is a leak at any part of the system. This greatly helps in isolating the defective sample quickly. It can be removed during operation, while the etching process continues on other samples. The circuit is built from standard integrated circuits and has its own power supply. Provisions have been made to connect this system to the computer for recording date, time and location of the leaky unetched samples. (author)