Results 1 - 10 of 562
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[en] The results of the investigation of cathodoluminescence (CL) spectra of three groups of monocrystals, the composition of which corresponds to the CdS-Ga2S3 section (mol.% CdS: 49.0; 50.0 and 50.5) are presented. The monocrystals have been grown from the solution in melt and identified by X-ray phase analysis and optical methods. It is shown that the CdGa2S4 luminescence spectrum in the dark blue-blue region consists at least of three separable bands with maxima at energies: 2.75, 2.92 and 3.15 eV (T=80 K). The shortest wave band has been found for the first time. Therefore, the CdGa2S4 luminescence spectrum can be changed using the nonstoichiometry of crystals
[en] In this article we calculate the contribution of the higher-twist Feynman diagrams to the large- pT inclusive gluon production cross-section in πρ collisions for the case of the frozen coupling constant approach within perturbative and holographic QCD. The contributions of the higher-twist effects to the cross section has extracted for the different pion distributions amplitudes. It is shown that higher-twist cross sections and ratio higher-twist cross section on the leading twist one is very sensitive on the choice of the pion distributions amplitudes, as predicted by holographic and perturbative QCD. Analysis of our calculations shows that the contribution of the higher-twist effects to the magnitude of the cross section is decreasing by the increasing of beam energy.
[en] In the paper it is studied the influence of γ irradiation and annealing on optic properties of gallium sulfide in IR spectrum range (wavenumber of 4000-400 cm-1). Comparative analysis of IR spectra of original, γ-irradiated and annealed samples of gallium sulfide shows that, change in temperature, annealing condition and selection of γ-irradiation (140 krad) leads to modification of the structure.The obtained data suggest that the effect of radiational change in IR absorption occurs as a result of defect reconstruction in band gap of the crystal and concentration of photosensitivity centers and their hole filling.
[en] A phase diagram of the GaS-EuS system has been studied by the methods of physicochemical analysis. The solubility of EuS in GaS (up to 0.1 mol.%) and GaS in EuS (up to 3 mol.%) has been found out. An existence of incongruently melted EuGaS2 compound has been established
[en] Using methods of physicochemic alanalysis for the first time phase diagrams of SmS-Ga2S3, Sm2S3-Ga2S3, SmS-GaS, Sm-GaS, SmGa2-SmS, SmGa2-GaS, GaS-SmGa2S4, Sm3S4-Ga2S3, Sm2S3-GaS, Sm3S4-SmGa2S4 cross sections are studied and the projection of the liquidus surface of the Sm-Ga-S ternary system is plotted. It is found that there exist 6 ternary compounds in the system (SmGa2S4, SmGaS3, SmGa4S7, Sm4GaS5, Sm3Ga2S5, Sm6Ga10/3S14) and, besides, found solid solutions based on GaS, Ga2S3 and SmGa2S4
[en] The dependence of photoelectric properties of CdGa2S4 single crystals on strong field has been studied. From the spectral distribution of the photocurrent at different electric field strengths, the photocurrent amplitude in intrinsic and impurity regions, and field dependences of rapid and show components of photocurrent decay and Bsub(s)/Bsub(r) ratio additional information on the nature of the recombination centre and the recombination mechanism were derived
[en] Phase equilibria in quasibinary Nd2S3-Ga2S3, Sm2S3-Ga2S3, Sm6Ga10/3S14-Nd6Ga10/3S14 systems are studied for the first time and diagrams of their states are built. The compounds of LnGaS3 and Ln6Ga10/3S14 composition are established to be formed in Ln2S3-Ga2S3(Ln-Nd, Sm) systems; Ln6Ga10/3S14 is condruently melted and crystallized in the tetragonal syngony. Continuous series of solid solutions are detected in Sm6Ga10/3S14-NdGa10/3S14 systems