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AbstractAbstract
No abstract available
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Journal Article
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Phys. Rev., C; v. 9(1); p. 409-412
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Lavrova, O.V.; Musikhin, Yu.A.; Martynov, P.N.; Sysoev, Yu.M.
Gosudarstvennyj Komitet po Ispol'zovaniyu Atomnoj Ehnergii SSSR, Obninsk (Russian Federation). Fiziko-Ehnergeticheskij Inst1995
Gosudarstvennyj Komitet po Ispol'zovaniyu Atomnoj Ehnergii SSSR, Obninsk (Russian Federation). Fiziko-Ehnergeticheskij Inst1995
AbstractAbstract
[en] The experimental investigations of electrolysis of gallium in GaCl3-GaI3 (50 % mol.) molten salts, penetrating through a three-layer membrane from the quartz cloth (thickness - 1 mm), with the hermetisation of electrolyte by liquid gallium are conducted. The output on the current constituted from 30 to 100 % respectively for three and one-valent gallium. The reached current density was up to 1000 A/mm2. The analysis of obtained results is conducted and one a number of suppositions concerning the change of electrolyte properties in the process of tests is made. 4 refs.; 6 figs
Original Title
Ehlektroliz galliya v solevykh rasplavakh
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Source
1995; 18 p
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Report
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AbstractAbstract
No abstract available
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3. international symposium on radiopharmaceutical chemistry; St. Louis, MO, USA; 16 - 20 Jun 1980; Published in summary form only.
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Journal Article
Literature Type
Conference
Journal
Journal of Labelled Compounds and Radiopharmaceuticals; v. 18(1-2); p. 221-222
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Ragan, G.E.
Virginia Univ., Charlottesville (USA)1972
Virginia Univ., Charlottesville (USA)1972
AbstractAbstract
No abstract available
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1972; 129 p; University Microfilms Order No. 72-22,641.; Thesis. (Ph.D.).
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Report
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Thesis/Dissertation
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AbstractAbstract
[en] The electronic band structures of GaNxAs1-x alloys were investigated versus the nitrogen mole fraction x and the nitrogen atomic configuration. The computational method is based on the sp3s* tight-binding technique. Two main nitrogen atomic distributions were considered: (i) the nitrogen atoms grouped in one region to form like a GaN dot inside the GaAs so as to have a maximally N-clustered (MNC) configuration; and (ii) the nitrogen atoms homogeneously distributed over the alloy and, of course, the minimal N-clustered distribution as the maximally As-clustered (MAsC) configuration. The former is found to always have the lowest band gaps. More interestingly, the results show that in the latter distribution the nitrogen atoms introduce resonant states above the conduction-band edge by about 230 meV, which is consistent with the literature, whereas they introduce a deep gap state above the valence-band edge at about 150 meV in the former distribution. As a suitable model for experimental samples, the MAsC configuration, was used to model some available photoluminescence data in the dilute regime
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Source
S0022-3727(06)17169-7; Available online at http://stacks.iop.org/0022-3727/39/2514/d6_12_008.pdf or at the Web site for the Journal of Physics. D, Applied Physics (ISSN 1361-6463) http://www.iop.org/; Country of input: International Atomic Energy Agency (IAEA)
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AbstractAbstract
[en] The character of the lowest unoccupied state in the random Ga(As0.5-yP0.5-yN2y) alloys is investigated for small nitrogen concentrations (0.1%<2y<1.0%) using a pseudopotential technique. As nitrogen is added to Ga(As0.5P0.5), this state evolves from an impurity localized level to a delocalized bandlike state. This evolution involves two processes. The first process is an anticrossing between the deep-gap nitrogen impurity level existing in the dilute alloy limit y→0 and the Γ1c-like extended state of Ga(As0.5P0.5). The second process is the formation of an impurity subband due to the interaction of the deep-gap nitrogen levels. These two processes are expected to occur in any Ga(As1-x-y1Px-y2Ny1+y2) alloys for which x is larger than 0.3
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Othernumber: PRBMDO000062000023015311000001; 101047PRB; The American Physical Society
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Journal Article
Journal
Physical Review. B, Condensed Matter and Materials Physics; ISSN 1098-0121;
; v. 62(23); p. 15311-15314

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AbstractAbstract
[en] Semi-empirical tight-binding sp3s* method for tetrahedrally co-ordinated cubic materials is used and applied to study the electronic band structure for GaAs, GaSb and GaP. These compounds are found to be indirect-gap semiconductors under pressure effect. The ionicity factor at critical transition pressure is presented by means of a recent empirical model. The structural phase transition can be seen from the behaviour of the bonding character. The obtained results are in reasonable agreement with experimental and theoretical data
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Source
S0254058402005114; Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
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AbstractAbstract
[en] The Moessbauer spectra of 67Ga(67Zn) and 67Cu(67Zn) impurity atoms in the bulk of GaP, GaAs, and GaSb samples correspond to isolated zinc centers at Ga sites. The observed shift of the spectral gravity center to higher positive velocities at the transition from p- to n-type samples corresponds to the recharging of a shallow zinc impurity center. Moessbauer spectra of 67Cu(67Zn) impurities at the surface of samples represent a superposition of spectra corresponding to isolated zinc centers at gallium sites with that corresponding to zinc associates with an arsenic vacancy. (author)
Source
1 ref., 2 figs., 1 tab.
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Journal Article
Journal
Uzbekiston Fizika Zhurnali; ISSN 1025-8817;
; v. 8(6); p. 303-305

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ANTIMONIDES, ANTIMONY COMPOUNDS, ARSENIC COMPOUNDS, ARSENIDES, BETA DECAY RADIOISOTOPES, BETA-MINUS DECAY RADIOISOTOPES, COPPER ISOTOPES, DAYS LIVING RADIOISOTOPES, ELECTRON CAPTURE RADIOISOTOPES, ELEMENTS, EVEN-ODD NUCLEI, GALLIUM COMPOUNDS, GALLIUM ISOTOPES, INTERMEDIATE MASS NUCLEI, ISOTOPES, METALS, NUCLEI, ODD-EVEN NUCLEI, PHOSPHIDES, PHOSPHORUS COMPOUNDS, PNICTIDES, RADIOISOTOPES, STABLE ISOTOPES, ZINC ISOTOPES
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Machlan, L.A.; Gramlich, J.W.; Powell, L.J.; Lambert, G.M.
National Bureau of Standards, Washington, DC (USA). Center for Analytical Chemistry1986
National Bureau of Standards, Washington, DC (USA). Center for Analytical Chemistry1986
AbstractAbstract
[en] An absolute value was obtained for the isotopic abundance ratio of a reference sample of gallium (Standard Reference Material 994), using thermal-ionization mass spectrometry. Samples of known isotopic composition, prepared from nearly isotopically pure separated gallium isotopes, were used to calibrate the mass spectrometers. The resulting absolute (69)Ga/(71)/Ga ratio is 1.50676 + or - 0.00039, which yields atom percents of (69)Ga=60.1079 + or - 0.0062 and (71)Ga=39.8921 + or - 0.0062. The atomic weight calculated from this isotopic composition is 69.72307 + or - 0.00013. The indicated uncertainties are overall limits of error based on two standard deviations of the mean and allowances for the effects of known sources of possible systematic error
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25 Jun 1986; 9 p; Available from NTIS, PC A04/MF A01; Included in J. of Research of the National Bureau of Standards, Vol. 91, No. 6, 323-331(Nov-Dec 1986).
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Cui, Jiangong; Zhang, Xia; Yan, Xin; Li, Junshuai; Huang, Yongqing; Ren, Xiaomen, E-mail: cuijiangong99999@163.com2014
AbstractAbstract
[en] We have investigated the preadsorption of gallium on GaAs(1 1 1)B surface during the self-catalyst growth of GaAs nanowires by first-principles calculations. We found that the Ga adatoms can be stabilized on GaAs(1 1 1)B surface only at low coverage. These Ga adatoms have a tendency to form Ga droplets when the Ga coverage is further increased. The micro-mechanism of Ga droplets formed on GaAs(1 1 1)B surface have also been revealed. The calculated result shows that the Ga adatoms dislike to incorporate on GaAs(1 1 1)B surface. The As adsorption on GaAs(1 1 1)B surface can be promoted by Ga preadsorption. The reason for Ga droplets can be used as collector of As atoms is that the As adatoms can stabilize the Ga preadsorbed GaAs(1 1 1)B surface. Our results are useful to understand the self-catalyst growth of GaAs nanowires
Source
S0921-4526(14)00540-7; Available from http://dx.doi.org/10.1016/j.physb.2014.07.006; Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
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