Results 1 - 10 of 16452
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[en] A nanoscale analysis of MOSFET switching loss is presented. A new analytical method based on drift diffusive and quantum transport principles with a non-equilibrium Green's function method is proposed. For the first time, the switching energy in a MOSFET is expressed as a function of the dc bias, operating frequency, dimensions, doping concentration and contact materials. The results provide a remarkable insight into the choice of geometries and materials for transistor designers
[en] An average Hamiltonian, which contains pair - atomic effects, is used to develop a theory of the Micromaser. A modified master equation is derived and both a steady - state and a time - dependent solutions are found showing that the trapping conditions are disturbed by influence of two-atomic events. An approximate as well as an exact spectrum are calculated and narrowing of linewidth is demonstrated within the framework of presented theory. (Authors)
[en] General inequalities for quadratic forms with coefficients depending on the values of Green's and Robin functions are obtained. These inequalities cover also the reduced moduli of strips and half-strips. Some applications of the results obtained to extremal partitioning problems and related questions of geometric function theory are discussed. Bibliography: 29 titles.
[en] In the present paper we give approximative expressions of the generalized density matrix of Bloch, which can be calculated exactly for the case of free electrons in a uniform magnetic field, while for the case of lattice electrons it can be expressed by the help of the Wannier functions. For the case of high temperatures the generalized density matrix coincides to the Green-function
[en] We obtain the density of states for electrons at the inversion layer of a MOS structure due to Na+ impurities located in the oxide. The impurity potential is assumed unscreened. We take account of disorder to obtain the configurational averaged Green's function starting from a tight binding Hamiltonian. (author)
[pt]Obtem-se a densidade de estados eletronica na camada de inversao de uma estrutura MOS devido a impurezas de Na+ localizadas no oxido. O potencial de impureza e assumido unscreened (nao protegido). Leva-se em consideracao a desordem para se obter a funcao de Green configuracional media partindo da hamiltomiana light binding. (AcAs)
[en] We study the dynamical equation of the time-ordered Green’s function at finite temperature. We show that the time-ordered Green’s function obeys a conventional Dyson equation only at equilibrium and in the limit of zero temperature. In all other cases, i.e. finite temperature at equilibrium or non-equilibrium, the time-ordered Green’s function obeys instead a modified Dyson equation. The derivation of this result is obtained from the general formalism of the non-equilibrium Green’s functions on the Keldysh time-loop contour. At equilibrium, our result is fully consistent with the Matsubara temperature Green’s function formalism and also justifies rigorously the correction terms introduced in an ad hoc way with Hedin and Lundqvist. Our results show that one should use the appropriate dynamical equation for the time-ordered Green’s function when working beyond the equilibrium zero-temperature limit.